A method and an apparatus for forming an electronic device is provided. The method comprises: providing a substrate; disposing at least one electronic component on the substrate via a solder paste; applying microwave radiation to the substrate to reflow the solder paste; applying a vacuum pressure to the substrate to remove voids formed within the solder paste during the reflowing of the solder paste; solidifying the solder paste into solder bumps between the substrate and the at least one electronic component.

A laser pressure head module including: a pressure member including: a first light-transmitting member; a second light-transmitting member; and a sealed space between the first light-transmitting member and the second light-transmitting member; and a gas supply unit to supply gas to the sealed space to generate a pressing force. The second light-transmitting member is to be expanded or moved in an external direction by the pressing force.

Methods and apparatus for bonding chiplets to substrates are provided herein. In some embodiments, a multi-chamber processing tool for processing substrates includes: an equipment front end module (EFEM) having one or more loadports for receiving one or more types of substrates; and a plurality of automation modules coupled to each other and having a first automation module coupled to the EFEM, wherein each of the plurality of automation modules include a transfer chamber and one or more process chambers coupled to the transfer chamber, wherein the transfer chamber includes a buffer, and wherein the transfer chamber includes a transfer robot configured to transfer the one or more types of substrates, wherein at least one of the plurality of automation modules include a bonder chamber and at least one of the plurality of automation modules include a wet clean chamber.

The disclosure is directed to wide band-gap semiconductor devices, such as power devices based on silicon carbide or gallium nitride materials. A power device die is attached to a carrier substrate or a base using sintered silver as a die attachment material or layer. The carrier substrate is, in some embodiments, copper plated with silver. The sintered silver die attachment layer is formed by sintering silver nanoparticle paste under a very low temperature, for example, lower than 200 C. and in some embodiments at about 150 C., and with no external pressures applied in the sintering process. The silver nanoparticle is synthesized through a chemical reduction process in an organic solvent. After the reduction process has completed, the organic solvent is removed through evaporation with a flux of inert gas being injected into the solution.

A method and an apparatus for forming an electronic device is provided. The method comprises: providing a substrate; disposing at least one electronic component on the substrate via a solder paste; applying an inert atmosphere to the substrate and the solder paste, wherein the inert atmosphere has a reduced oxygen partial pressure compared with air atmosphere; and reflowing the solder paste by a heating process within the inert atmosphere to reduce voids formed within the solder paste during the reflowing of the solder paste.

A bonding system for bonding a semiconductor element to a substrate is provided. The bonding system includes a bond head assembly including a bonding tool configured for bonding the semiconductor element to the substrate. The bonding system also includes a reducing gas delivery system for providing a reducing gas to a bonding area of the bonding system. The reducing gas delivery system includes a manifold. The manifold includes a lower surface defining (i) a reducing gas port for providing the reducing gas to the bonding area, and (ii) an exhaust port for removing a reaction product from the bonding area.

A method and device for modifying a surface of a substrate with a plasma in an inert gas environment, comprises enclosing the substrate in a chamber having surrounding sidewalls and a movable coverplate above the surrounding sidewalls with a gap therebetween, affixing a plasma source to the movable coverplate having a plasma outlet through the coverplate into the chamber, purging the chamber with inert gas sufficient to reduce an oxygen concentration of the chamber to several orders of magnitude less than in air, the inert gas entering through and inlet to the chamber and exiting through an outlet from the chamber, and scanning and activating the plasma source affixed to the cover plate over the substrate, such as to expose the surface of the substrate to a reactive species generated by the plasma delivered through the plasma outlet. An inert gas environment is maintained within the chamber throughout the scanning.

The disclosure relates to assemblies and methods for preheating objects in the process of underfill. Specifically, the disclosure relates to assemblies and methods for treating printed circuit boards (PCBs), integrated circuits (ICs) wafers and the like, in the preheating stage of the underfill process using an assembly operable to create a customizable hot-air bath with adjustable depth to account for surface topology and necessary clearances, for soaking the PCBs, ICs, wafers and the like in hot air, bringing these to operating temperature.