A wafer-to-wafer bonding structure includes a first wafer having a first bonding layer thereon, a first main pattern region, a first scribe lane surrounding the first main pattern region, and a first alignment cavity disposed in the first bonding layer within the first main pattern region; and a second wafer having a second bonding layer bonded to the first bonding layer, a second main pattern region, a second scribe lane surrounding the second main pattern region, and a second alignment cavity disposed in the second bonding layer within the second main pattern region.

An apparatus comprising a first substrate, a dam structure disposed on a first side of the first substrate, and an integrated circuit (IC) memory chip coupled to the first side of the first substrate by a plurality of first conductive members. A second substrate is coupled to a second side of the first substrate by a plurality of second conductive members. A lid coupled to the second substrate encloses the IC memory chip and the first substrate. A thermal interface material (TIM) is coupled between the lid and the dam structure.

A method for manufacturing a semiconductor structure includes: forming a device portion and a front interconnect portion on a base substrate; forming a first bonding part on the front interconnect portion opposite to the device portion, the first bonding part including a first bonding layer and heat-dissipating elements formed in the first bonding layer, a thermal resistance of the heat-dissipating elements being smaller than a thermal resistance of the first bonding layer; forming a second bonding part on a carrier substrate; and performing a bonding process to bond the second bonding part to the first bonding part.