The present invention includes a liquid film formation step of supplying a processing liquid in which a sublimation drying processing agent obtained by mixing a first sublimable substance and a second sublimable substance which are different from each other in a eutectic composition or a near-eutectic composition is liquefied, onto a front surface of a substrate on which a pattern is formed, to thereby form a liquid film of the processing liquid on the front surface of the substrate, a solidified film formation step of solidifying the liquid film of the processing liquid, to thereby form a solidified film of the sublimation drying processing agent, and a sublimation step of sublimating the solidified film, to thereby remove the solidified film from the front surface of the substrate.

A cleaning system includes at least one cleaning module configured to receive a substrate after a chemical mechanical polishing (CMP) process and to remove contaminants on the substrate using a cleaning solution. The cleaning system further includes a cleaning solution supply system configured to supply the cleaning solution to the at least one cleaning module. The cleaning solution supply system includes at least one temperature control system. The at least one temperature control system includes a heating device configured to heat the cleaning solution, a cooling device configured to cool the cleaning solution, a temperature sensor configured to monitor a temperature of the cleaning solution, and a temperature controller configured to control the heating device and the cooling device.

A method for processing a substrate includes dispensing isopropyl alcohol (IPA) onto the substrate, providing the substrate into a processing chamber, pressurizing the processing chamber to a pressure above 5 MPa, removing the IPA on the substrate by displacing the IPA with liquid carbon dioxide (CO.sub.2), and removing the liquid CO.sub.2 as gaseous CO.sub.2 by venting the processing chamber.