H10W72/01308

Dam for three-dimensional integrated circuit

An apparatus comprising a first substrate, a dam structure disposed on a first side of the first substrate, and an integrated circuit (IC) memory chip coupled to the first side of the first substrate by a plurality of first conductive members. A second substrate is coupled to a second side of the first substrate by a plurality of second conductive members. A lid coupled to the second substrate encloses the IC memory chip and the first substrate. A thermal interface material (TIM) is coupled between the lid and the dam structure.

INTEGRATION OF SELF-ASSEMBLY FEATURES WITH PHOTONIC CIRCUITS

Photonics integrated circuit (PIC) dies bonded to photonics substrates, related apparatuses, systems, and methods of fabrication are disclosed. A photonics substrate and a PIC die include corresponding optical bonding regions one or both of which are surrounded by hydrophobic structures. A liquid droplet is applied to the PIC die or photonics substrate optical bonding region and the PIC die is placed on the optical bonding region of the photonics substrate. Capillary forces cause the PIC die to self-align to the optical bonding region, and an optical bond is formed by evaporating the liquid and subsequent anneal.

SEMICONDUCTOR PACKAGE AND METHOD FOR FORMING THE SAME
20260123381 · 2026-04-30 ·

A semiconductor package and a method for forming the same are provided. The method includes: providing a substrate; mounting a semiconductor die on a top surface of the substrate; forming a barrier wall on a peripheral area of a top surface of the semiconductor die; dispensing a first fluid material on the top surface of the semiconductor die, wherein the barrier wall prevents the first fluid material from flowing across it; and curing the first fluid material to form a back side metallization (BSM) layer.