A power semiconductor package includes: a metal plate having opposing first and second sides; a lateral wall extending along a rim of the first side of the metal plate and surrounding an inner portion of the first side; at least one die carrier arranged over the inner portion of the first side of the metal plate; a power semiconductor die arranged over and electrically coupled to the die carrier, the die carrier electrically isolating the power semiconductor die from the metal plate; and a printed circuit board (PCB) arranged over the lateral wall and covering the inner portion of the first side of the metal plate such that the die carrier and the power semiconductor die are arranged within an interior volume of the power semiconductor package encapsulated by the inner portion of the first side of the metal plate, the lateral wall and the PCB.

A semiconductor device package includes an interconnect structure with a first surface having at least one die thereon and a second surface that is opposite the first surface and is configured to be coupled to an external device. A protective structure on the first surface of the interconnect structure exposes a heat dissipating surface facing away from the interconnect structure in one or more directions. Related devices and fabrication methods are also discussed.

There are provided a semiconductor module capable of preventing the adhesion of an epoxy resin to a terminal to which at least one of a high current and a high voltage is supplied and a method for manufacturing a semiconductor module. A semiconductor module includes: a case having an inner wall defining a casting region and a peripheral edge portion arranged outside the inner wall; an intermediate terminal arranged in along side portion of a peripheral edge portion and having a fastening surface to which a cable is fastened; a structure arranged in a long side portion of the inner wall to be adjacent to the long side portion where the intermediate terminal is arranged and higher than the fastening surface; and a sealing section formed of an epoxy resin, having weld lines formed close to the side of the structure on a surface, and cast into a casting region to seal transistors.

There are provided a semiconductor module capable of preventing the adhesion of an epoxy resin to a terminal to which at least one of a high current and a high voltage is supplied and a method for manufacturing a semiconductor module. A semiconductor module includes: a case having an inner wall defining a casting region and a peripheral edge portion arranged outside the inner wall; an intermediate terminal arranged in along side portion of a peripheral edge portion and having a fastening surface to which a cable is fastened; a structure arranged in a long side portion of the inner wall to be adjacent to the long side portion where the intermediate terminal is arranged and higher than the fastening surface; and a sealing section formed of an epoxy resin, having weld lines formed close to the side of the structure on a surface, and cast into a casting region to seal transistors.