The present disclosure provides a method for manufacturing a semiconductor package. The method includes disposing a first semiconductor substrate on a temporary carrier and dicing the first semiconductor substrate to form a plurality of dies. Each of the plurality of dies has an active surface and a backside surface opposite to the active surface. The backside surface is in contact with the temporary carrier and the active surface faces downward. The method also includes transferring one of the plurality of dies from the temporary carrier to a temporary holder. The temporary holder only contacts a periphery portion of the active surface of the one of the plurality of dies.

A method of manufacturing a semiconductor device includes forming a cell chip including a first substrate, a source layer on the first substrate, a stacked structure on the source layer, and a channel layer passing through the stacked structure and coupled to the source layer, flipping the cell chip, exposing a rear surface of the source layer by removing the first substrate from the cell chip, performing surface treatment on the rear surface of the source layer to reduce a resistance of the source layer, forming a peripheral circuit chip including a second substrate and a circuit on the second substrate, and bonding the cell chip including the source layer with a reduced resistance to the peripheral circuit chip.

Embodiments described herein generally relate to processes for back end of line advanced packaging assembly. More particularly, embodiments described herein relate to processes for activating silicon surfaces for hydrophilic silicon direct bonding applications. In at least one embodiment, a method for activating a substrate is provided. The method includes providing a substrate into a process chamber, the substrate including a plurality of patterned structures, at least one metal layer and a silicon surface, and curing the silicon surface of the substrate. The curing process includes flowing one or more gases into the process chamber, the one or more gases including ozone, and providing UV light while operating the process chamber at a temperature of about 25 C. to about 300 C. A plurality of oxygen radicals are formed from the ozone and reacted with the silicon surface of the substrate to form an activated surface.

A method of bonding a semiconductor element to a substrate is provided. The method includes the steps of: (a) carrying the semiconductor element with a bonding tool, the semiconductor element including a first plurality of conductive structures; (b) supporting the substrate with a support structure, the substrate including a second plurality of conductive structures; (c) heating at least one of the first plurality of conductive structures and the second plurality of conductive structures such that at least one of (i) the first plurality of conductive structures and (ii) the second plurality of conductive structures expands; (d) bonding the first plurality of conductive structures to corresponding ones of the second plurality of conductive structures; and (e) bonding a dielectric surface of the semiconductor element to a dielectric surface of the substrate after step (d).