H10W72/01212

Display device including a wiring pad and method for manufacturing the same
12550445 · 2026-02-10 · ·

A display includes a wiring pad and a dummy pad on a first substrate. A first planarization layer is disposed on the wiring pad and the dummy pad. A first pad electrode layer is connected to the wiring pad and a second pad electrode layer is connected to the dummy pad. The first and second pad electrode layers are disposed on the first planarization layer. A first insulating layer covers the first and second pad electrode layers. A first pad electrode upper layer is disposed on the first pad electrode layer. A second pad electrode upper layer is disposed on the second pad electrode layer. The wiring pad, the first pad electrode layer, and the first pad electrode upper layer are electrically connected. The dummy pad, the second pad electrode layer, and the second pad electrode upper layer are electrically connected.

CONNECTOR

The present disclosure relates to an electronic device comprising a wafer comprising a first upper surface having at least one first contact arranged thereon; and at least one die comprising a second upper surface having at least one second contact arranged thereon, and at least one first lateral surface orthogonal to the second upper surface, said first contact being coupled to said second contact by a connector comprising one first conductive pillar formed on said first contact of said wafer; one second conductive pillar formed on said second contact of said die; and at least one conductive ball positioned in contact with at least a first upper portion of said first pillar(s) and in contact with at least one second upper portion of said second pillar(s).

CHIP PACKAGE DEVICE
20260090441 · 2026-03-26 ·

The present disclosure provides a chip package device. An example chip package device includes: at least one connection pad on a first surface of the chip; at least one pillar extending from, and in contact with, the pad; the pillar being formed in an alloy of a first element and of a second element, a melting temperature of the alloy being greater than a melting temperature of at least one of the first and second elements and greater than 260 C.