A semiconductor device includes a subtractive skip via technique in which a relatively high aspect ratio (HAR) skip via is fabricated within a lower aspect ratio (LAR) skip via opening. A metal fill is formed within the LAR skip via opening. Undesired portions of the metal fill region are removed, a retained portion or portion thereof forms the HAR skip via, and/or retained portions thereof forms multiple HAR skip vias, or the like. After forming these substrative via(s), a dielectric backfill may be formed therearound within the remaining LAR skip via opening. This backfill dielectric may be selected to reduce shorting propensities between the substrative via(s) and respective one or more wiring structures in a lower level, in a higher level, and/or the skipped level(s).

A method includes etching a mandrel layer to form mandrel strips, and selectively depositing metal lines on sidewalls of the mandrel strips. During the selective deposition, top surfaces of the mandrel strips are masked by dielectric masks. The method further includes removing the mandrel layer and the dielectric masks, filling spaces between the metal lines with a dielectric material, forming via openings in the dielectric material, with top surfaces of the metal lines exposed to the via openings, and filling the via openings with a conductive material to form vias.