A method of forming an electrical contact in a semiconductor structure includes performing a patterning process to form a mask on a semiconductor structure, the semiconductor structure comprising a first semiconductor region, a second semiconductor region, a dielectric layer having a first opening over the first semiconductor region and a second opening over the second semiconductor region, wherein the mask covers an exposed surface of the second semiconductor region within the second opening, performing an amorphization ion implant process to amorphize an exposed surface of the first semiconductor region within the first opening, performing a removal process to remove the mask, performing a selective epitaxial deposition process, to epitaxially form a contact layer on the exposed surface of the second semiconductor region, and performing a recrystallization anneal process to recrystallize the amorphized surface of the first semiconductor region.

Provided are semiconductor devices, e.g., transistors, and methods of manufacturing semiconductor devices which achieve NMOS band edge with low resistivity and having improved device performance and reliability. Provided are materials that can be used as effective N-metal films for transistors. Instead of conventional titanium aluminum carbide (TiAlC) based N-metal films, provided are binary/ternary metal carbide films and metal silicide films that may be used as N-metal films with no/minimal high-k (HK) capping layer required.

A method for forming a contact for a source-drain of a gate all around structure incorporates exposing at least a portion of a nanosheet during formation of the contact. A method may include removing a source-drain material to form an exposed portion of a nanosheet material of at least one nanosheet, forming epitaxial contact layers on the source-drain material and the exposed portion of the nanosheet material, forming a silicide contact layer on at least the epitaxial contact layers, and forming a contact with a metal material on the silicide contact layer. In some embodiments, an exposed portion of the nanosheet material comprises an entire end of at least one nanosheet alone or in conjunction with at least a portion of another nanosheet or in conjunction with an entire end of at least one other nanosheet.