An electronic device is provided. An example electronic device includes: a semiconductor body of Silicon Carbide, having a surface having a first portion of the surface that defines an active region of the electronic device and a second portion of the surface that is external to the active region; a metallization extending on the first portion of the surface of the semiconductor body; a passivation layer extending on part of the metallization; and an adhesion layer, based on one or more carbon allotropes, extending on the passivation layer.

A semiconductor device according to the present invention includes a first conductive-type Sic semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm.

A semiconductor device includes a chip, an electrode that is formed on the chip, an inorganic insulating layer that covers the electrode and has a first opening exposing the electrode, an organic insulating layer that covers the inorganic insulating layer, has a second opening surrounding the first opening at an interval from the first opening, and exposes an inner peripheral edge of the inorganic insulating layer in a region between the first opening and the second opening, and an Ni plating layer that covers the electrode inside the first opening and covers the inner peripheral edge of the inorganic insulating layer inside the second opening.