A method of forming an integrated circuit (IC) package includes electroplating a seed layer in a first electroplating process to form a polycrystalline copper layer of a bond pad structure of an IC structure over an active circuit region of the IC structure. The method also including electroplating over the polycrystalline copper layer in a second electroplating process, different than the first electroplating process, to form a nanotwin copper layer of the bond pad structure. The method further including attaching a bond wire to the nanotwin copper layer of the bond pad structure to form a copper-to-copper bond between the bond wire and the nanotwin copper layer of the bond pad structure.

A method includes forming a seed layer on a substrate. The seed layer includes a first metal. The method also includes forming a first metal layer over the seed layer. The first metal layer includes a second metal. The method further includes forming a second metal layer over the first metal layer. The second metal layer includes the first metal. The method includes converting at least a portion of the first metal layer into an alloy of the first metal and the second metal. The seed layer is then etched.

A method for manufacturing a semiconductor stack structure with ultra thin dies includes manufacturing a plurality of semiconductor wafers. A carrier board is bonded to the redistribution layer of one of the semiconductor wafers, then the second substrate part and the stop layer structure are removed to expose the first substrate part, and the wafer conductive structures are penetrated thereon and connected to the redistribution layer. By thinning the first substrate part, the wafer conductive structures are protruded, and a bonding dielectric layer is formed to cover the wafer conductive structures and is thinned to expose the wafer conductive structure. A bonding layer with conductive pillars is formed on the redistribution layer of another semiconductor wafer, and a die sawing is performed to form a plurality of batches of dies. The bonding layers of a batch of dies are bonded to the bonding dielectric layer by using hybrid bonding technology.

A semiconductor die package includes a semiconductor transistor die having a contact pad on an upper main face. The semiconductor die package also includes an electrical conductor disposed on the contact pad and fabricated by laser-assisted structuring of a metallic material, and an encapsulant covering the semiconductor die and at least a portion of the electrical conductor.