A method of manufacturing a power semiconductor device in accordance with an embodiment of the present disclosure may include providing a substrate disposed atop a heatsink, electrically connecting a semiconductor die to a top surface of the substrate, disposing a thin metallic layer atop the substrate, disposing a terminal atop the thin metallic layer, and performing a welding operation wherein a laser beam is directed at a top surface of the terminal to produce a plurality of weld connections connecting the terminal to the substrate, wherein the weld connections are separated by gaps, and wherein heat generated during the welding operation melts the thin metallic layer and molten material of the thin metallic flows into the gaps.

An electronic device has a molded package (e.g., a quad flat no leads package) with attached connectors. The molded package includes one or more semiconductor dies and is pretested prior to attachment of the connectors. Along these lines, such molded packages may be pretested in parallel at high volume due to their relatively small form factor (e.g., at numbers several times greater than those for testing leaded socket assemblies). Following such pretesting, the connectors are attached to the pretested molded package (e.g., by directly fusing the connectors to metallic pads on surfaces of the packaged integrated circuit via laser welding or soldering). Such electronic devices may be further tested if desired (e.g., opens/shorts tested) and encased within housings to form larger modules (e.g., accelerometers, pressure sensors, etc.).