A super junction device may be formed by decreasing the width of the P-type region and increasing the doping concentration, allowing for an increased height of the device. However, instead of etching a trench to fill with the P-type material, a trench may be etched for both the P-type and adjacent N-type regions. This allows the height of the device to be increased while maintaining a feasible aspect ratio for the trench. The P-type material may be formed on the sidewall on the trench to be relatively thin. The trench may then be filled with N-type material such that the P-type region fills the space between the N-type regions without any voids or seams, while having a width that would be unattainable using traditional etch-and-fill methods for the P-type region alone. Wide bandgap materials may also be used to increase the voltage rating.