Semiconductor devices that include a replacement metallic gate electrode and a gate-level semiconductor structure can be formed on a seme semiconductor substrate by providing an etch-stop structure that prevents replacement of the gate-level semiconductor structure, and by replacing a sacrificial semiconductor gate electrode with the replacement metallic gate electrode. The gate-level semiconductor structure may include a semiconductor gate electrode of a field effect transistor, or a semiconductor material strip that can be employed as a resistor. In one embodiment, the etch-stop structure and an overlying sacrificial structure may be replaced with another replacement metallic gate electrode. In another embodiment, a silicide region may be formed on the semiconductor gate electrode.

Semiconductor devices that include a replacement metallic gate electrode and a gate-level semiconductor structure can be formed on a seme semiconductor substrate by providing an etch-stop structure that prevents replacement of the gate-level semiconductor structure, and by replacing a sacrificial semiconductor gate electrode with the replacement metallic gate electrode. The gate-level semiconductor structure may include a semiconductor gate electrode of a field effect transistor, or a semiconductor material strip that can be employed as a resistor. In one embodiment, the etch-stop structure and an overlying sacrificial structure may be replaced with another replacement metallic gate electrode. In another embodiment, a silicide region may be formed on the semiconductor gate electrode.

Semiconductor devices that include a replacement metallic gate electrode and a gate-level semiconductor structure can be formed on a seme semiconductor substrate by providing an etch-stop structure that prevents replacement of the gate-level semiconductor structure, and by replacing a sacrificial semiconductor gate electrode with the replacement metallic gate electrode. The gate-level semiconductor structure may include a semiconductor gate electrode of a field effect transistor, or a semiconductor material strip that can be employed as a resistor. In one embodiment, the etch-stop structure and an overlying sacrificial structure may be replaced with another replacement metallic gate electrode. In another embodiment, a silicide region may be formed on the semiconductor gate electrode.