A semiconductor package includes; a first semiconductor chip and a second semiconductor chip stacked on the first semiconductor chip. The first semiconductor chip includes; a first substrate, a first bonding pad on a first surface of the first substrate, and a first passivation layer on the first surface of the first substrate exposing at least a portion of the first bonding pad. The second semiconductor chip includes; a second substrate, a second insulation layer on a front surface of the second substrate, a second bonding pad on the second insulation layer, a first alignment key pattern on the second insulation layer, and a second passivation layer on the second insulation layer, covering at least a portion of the first alignment key pattern, and exposing at least a portion of the second bonding pad, wherein the first bonding pad and the second bonding pad are directly bonded, and the first passivation layer and the second passivation layer are directly bonded.

A method for manufacturing a semiconductor package includes forming a first semiconductor chip having a first bonding surface, the first semiconductor chip including a first outermost insulating layer providing the first bonding surface, a first internal insulating layer on the first outermost insulating layer, a first external marks within the first outermost insulating layer, and a first internal mark within the first internal insulating layer. The first external marks include a first pattern having a first center portion and a second pattern having a first ring portion surrounding the first center portion when viewed in a plan view, the first internal mark is disposed between the first center portion and the first ring portion when viewed in the plan view, and the first external marks and the first internal mark together form a first alignment structure.

A driving substrate, a micro LED transfer device and a micro LED transfer method are provided. A side surface of the driving substrate is arranged with a binding metal layer, a positioning layer is arranged around the binding metal layer, and a width of the positioning layer at a position away from the driving substrate is less than that a width at a position close to the driving substrate.