A semiconductor device includes a first substrate and a second substrate. A graphene-coated interconnect is disposed between the first substrate and second substrate. A semiconductor die is disposed between the first substrate and second substrate. The first substrate is electrically coupled to the second substrate through the graphene-coated interconnect. An encapsulant is deposited between the first substrate and second substrate.

Embodiments disclosed herein include an apparatus that comprises a substrate, and the substrate includes glass. In an embodiment, an opening is provided through a thickness of the substrate, and a layer is along a sidewall of the opening. In an embodiment, the layer comprises a polymer and an electrical conductor that comprises carbon. In an embodiment, a via is provided in the opening, and the via is an electrically conductive material.

Provided is an electronic device, which includes a substrate, a via, a conductive element and a circuit structure. The via penetrates through the substrate and includes a first via and a second via. The conductive element is disposed in the via and includes a first conductive element and a second conductive element. The first conductive element is disposed in the first via. The second conductive element is disposed in the second via. The circuit structure is disposed on the substrate and is electrically connected to the conductive element. In a first direction, there is a first spacing between the two adjacent first conductive elements. There is a second spacing between the two adjacent second conductive elements. The first spacing is greater than the second spacing.