A semiconductor device is disclosed herein. The semiconductor device includes a first conductive feature disposed over a substrate and a silicon carbon nitride (SiCN) layer disposed over the first conductive feature, wherein the SiCN layer has a nitrogen concentration of greater than about 30% and a carbon concentration of less than about 10%.

A carrier structure and methods of forming and using the same are described. In some embodiments, the method includes forming one or more devices over a substrate, forming a first interconnect structure over the one or more devices, and bonding the first interconnect structure to a carrier structure. The carrier structure includes a semiconductor substrate, a release layer, and a first dielectric layer, and the release layer includes a metal nitride. The method further includes flipping over the one or more devices so the carrier structure is located at a bottom, performing backside processes, flipping over the one or more devices so the carrier structure is located at a top, and exposing the carrier structure to IR lights. Portions of the release layer are separated from the first dielectric layer.