An embodiment is a device including an integrated circuit die having an active side and a back side, the back side being opposite the active side, a molding compound encapsulating the integrated circuit die, and a first redistribution structure overlying the integrated circuit die and the molding compound, the first redistribution structure including a first metallization pattern and a first dielectric layer, the first metallization pattern being electrically coupled to the active side of the integrated circuit die, at least a portion of the first metallization pattern forming an inductor.

According to one embodiment, a semiconductor device includes a substrate, at least one semiconductor part, and a non-semiconductor part. The substrate has a first face and a second face on a side opposite to that of the first face, and has a first linear expansion coefficient. The at least one semiconductor part is disposed on a first region of the first face, and has a second linear expansion coefficient that is smaller than the first linear expansion coefficient. The non-semiconductor part is disposed on a second region of the first face, on which no semiconductor part is disposed, and has a third linear expansion coefficient that is greater than the first linear expansion coefficient.