A method for fabricating a maskless dendritic silicon nanostructure array, in which a copper layer is deposited on a surface of a silicon substrate, and passivated to form an insulating passivation film; a first laser induction is performed using a first laser beam to remove the insulating passivation film from a designated region and form a primary needle-shaped protrusion structure; a second laser induction is performed on the primary needle-shaped protrusion structure using a second laser beam to form a secondary dome-shaped protrusion structure, thereby forming a dual-level needle-shaped seed layer; the dual-level needle-shaped seed layer is subjected to parameter-controlled electrodeposition to grow dendritic microstructures, so as to obtain a silicon wafer containing the maskless dendritic silicon nanostructure array. A silicon wafer with a silicon nanostructure array fabricated by such process is also provided.

Various examples relate to a diamond-based film for a die stack, to a method for forming a diamond-based film for a die stack, and to a die stack comprising at least one diamond-based film. The diamond-based film comprises a plurality of laser-induced graphitic structures configured to provide electrical connectivity between a first semiconductor die and a second semiconductor die arranged adjacent to the diamond-based film in the die stack.

A component carrier includes i) a stack with at least one electrically conductive layer structure and/or at least one electrically insulating layer structure, ii) an electronic component embedded in the stack; and iii) a thermal structure, configured to dissipate thermal energy produced by the electronic component towards and beyond a main surface of the stack. The thermal structure includes iiia) a base structure mounted on and/or at least partially embedded in the stack, in particular flush with one of the layer structures of the stack, and iiib) a plurality of protrusions, protruding from the base structure, and extending beyond the main surface of the stack.