A clip-bonded semiconductor package including: a semiconductor die including a bond pad on a top side of the semiconductor die, the bond pad is arranged to receive a bond clip, the bond clip is also arranged to provide electrical connection to the bond pad via a connection part of the bond clip, the bond clip further includes a buffer layer provided to at least the connection part. A hardness of a material of the buffer layer is lower than a hardness of a material of the bond clip.

A electrical connection element includes a planar mating surface adapted for mating with a metal bonding surface, a rim that forms an enclosed shape around the planar mating surface, and a plurality of outgassing grooves formed in the planar mating surface, wherein each of the outgassing grooves comprises a proximal end that is spaced apart from the rim and a distal end that intersects the rim, and wherein a cross-sectional area of each of the outgassing grooves increases along a lengthwise direction going from the proximal end to the distal end.