Embodiments described herein relate to the concept and designs of a polymer-based thermal ground plane. In accordance with one embodiment, a polymer is utilized as the material to fabricate the thermal ground plane. Other embodiments include am optimized wicking structure design utilizing two arrays of micropillars, use of lithography-based microfabrication of the TGP using copper/polymer processing, micro-posts, throttled releasing holes embedded in the micro-posts, atomic layer deposition (ALD) hydrophilic coating, throttled fluid charging structure and sealing method, defect-free ALD hermetic coating, and compliant structural design.

An acoustic transduction unit, a manufacturing method thereof and an acoustic transducer, and relates to the technical field of electronic devices. A first electrode is arranged on a first substrate, a support layer is arranged on a side, close to the first electrode, of the first substrate, and a conductive diaphragm layer is arranged on a side, away from the first substrate, of the support layer; a cavity is enclosed by the support layer, overlapping areas exist between orthographic projections of the first electrode, the conductive diaphragm layer and the cavity on the first substrate, and the conductive diaphragm layer serves as both a diaphragm layer and a second electrode in the acoustic transduction unit, it allows the conductive diaphragm layer to be configured as both the diaphragm layer and the second electrode, a layer structure of the acoustic transduction unit is simple.

A method for fabricating a semiconductor device is disclosed. A semiconductor substrate comprising a MOS transistor is provided. A MEMS device is formed over the MOS transistor. The MEMS device includes a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm.

A semiconductor device includes a semiconductor substrate comprising a MOS transistor. A MEMS device is integrally constructed above the MOS transistor. The MEMS device includes a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm.

Provided is a PCB speaker and a method for micromachining the speaker diaphragm on PCB substrate, the method for micromachining the speaker diaphragm on PCB substrate comprises: providing metal paths and at least one through hole on the PCB substrate; providing a patterned sacrificial layer on the PCB substrate, the sacrificial layer covering all the through holes on the PCB substrate; providing a diaphragm layer on the sacrificial layer through depositing, mounting or laminating, the diaphragm layer covering the sacrificial layer and electrically connected with the metal paths on the PCB substrate, thereby forming a diaphragm layer; and releasing the sacrificial layer and the diaphragm layer remains. With the micromachining method for the above PCB substrate and the diaphragm, the production cost of the speaker can be lowered, and the reliability of the product can be improved at the same time.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both metal material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

A semiconductor device includes a semiconductor substrate comprising a MOS transistor. A MEMS device is integrally constructed above the MOS transistor. The MEMS device includes a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.