The invention includes a method of promoting interfacial mechanical bonding of two or more components through the use of suspended and/or freestanding structures fabricated using an atom-scale assembly process on at least a portion of the surfaces of such components.

Disclosed is a method for manufacturing a thin film transistor. The method includes steps of etching a second metal layer and a semiconductor layer to form a boundary region of a thin film transistor; etching the second metal layer again to form a source, a drain and a back channel region of the thin film transistor; removing residual photoresist via an ashing procedure; and etching the semiconductor layer again to form a conductive channel of the thin film transistor. According to the method, the electric leakage problem of thin film transistor due to diffusion of copper and contamination of organic stripping liquid can be eliminated.

Provided is a microfluidic film including a first microfluidic film including a first base film, a first microchannel, which is formed on the first base film and through which a fluid flows, and a first through passage, which is configured to pass through the first base film, and a second microfluidic film including a second base film being stacked on the first base film and a second through passage, which is configured to pass through the second base film and communicates with the first through passage.

In described examples, a hermetic package of a microelectromechanical system (MEMS) structure includes a substrate having a surface with a MEMS structure of a first height. The substrate is hermetically sealed to a cap forming a cavity over the MEMS structure. The cap is attached to the substrate surface by a vertical stack of metal layers adhering to the substrate surface and to the cap. The stack has a continuous outline surrounding the MEMS structure while spaced from the MEMS structure by a distance. The stack has: a first bottom metal seed film adhering to the substrate and a second bottom metal seed film adhering to the first bottom metal seed film; and a first top metal seed film adhering to the cap and a second top metal seed film adhering to the first top metal seed film.

An MEMS double-layer suspension microstructure manufacturing method, comprising: providing a substrate (100); forming a first dielectric layer (200) on the substrate (100); patterning the first dielectric layer (200) to prepare a first film body (210) and a cantilever beam (220) connected to the first film body (210); forming a sacrificial layer (300) on the first dielectric layer (200); patterning the sacrificial layer (300) located on the first film body (210) to make a recess portioned portion (310) for forming a support structure (420), with the first film body (210) being exposed at the bottom of the recess portioned portion (310); forming a second dielectric layer (400) on the sacrificial layer (300); patterning the second dielectric layer (400) to make the second film body (410) and the support structure (420), with the support structure (420) being connected to the first film body (210) and the second film body (410); and removing part of the substrate under the first film body (210) and removing the sacrificial layer (300) to obtain the MEMS double-layer suspension microstructure. In addition, an MEMS infrared detector is also disclosed.

A method of manufacturing a microfluidic device, said method comprising placing a length of material in a liquid polymer, configuring the length of material to define the path of a microfluidic channel, curing or setting the polymer liquid to form a solid polymer around the configured length of material, and dissolving the configured length of material with a solvent to provide a microfluidic channel in the solid polymer.

Embodiments described herein relate to the concept and designs of a polymer-based thermal ground plane. In accordance with one embodiment, a polymer is utilized as the material to fabricate the thermal ground plane. Other embodiments include am optimized wicking structure design utilizing two arrays of micropillars, use of lithography-based microfabrication of the TGP using copper/polymer processing, micro-posts, throttled releasing holes embedded in the micro-posts, atomic layer deposition (ALD) hydrophilic coating, throttled fluid charging structure and sealing method, defect-free ALD hermetic coating, and compliant structural design.

The present invention generally relates to a method for forming a MEMS device and a MEMS device formed by the method. When forming the MEMS device, sacrificial material is deposited around the switching element within the cavity body. The sacrificial material is eventually removed to free the switching element in the cavity. The switching element has a thin dielectric layer thereover to prevent etchant interaction with the conductive material of the switching element. During fabrication, the dielectric layer is deposited over the sacrificial material. To ensure good adhesion between the dielectric layer and the sacrificial material, a silicon rich silicon oxide layer is deposited onto the sacrificial material before depositing the dielectric layer thereon.

In described examples, a hermetic package of a microelectromechanical system (MEMS) structure includes a substrate having a surface with a MEMS structure of a first height. The substrate is hermetically sealed to a cap forming a cavity over the MEMS structure. The cap is attached to the substrate surface by a vertical stack of metal layers adhering to the substrate surface and to the cap. The stack has a continuous outline surrounding the MEMS structure while spaced from the MEMS structure by a distance. The stack has: a first bottom metal seed film adhering to the substrate and a second bottom metal seed film adhering to the first bottom metal seed film; and a first top metal seed film adhering to the cap and a second top metal seed film adhering to the first top metal seed film.

A method for manufacturing a film support beam includes: providing a substrate having opposed first and second surfaces; coating a sacrificial layer on the first surface of the substrate, and patterning the sacrificial layer; depositing a dielectric film on the sacrificial layer to form a dielectric film layer, and depositing a metal film on the dielectric film layer to form a metal film layer; patterning the metal film layer, and dividing a patterned area of the metal film layer into a metal film pattern of a support beam portion and a metal film pattern of a non-support beam portion, wherein a width of the metal film pattern of the support beam portion is greater than a width of a final support beam pattern, and a width of the metal film pattern of the non-support beam portion is equal to a width of a width of a final non-support beam pattern at the moment; photoetching and etching on the metal film layer and the dielectric film layer to obtain the final support beam pattern, the final non-support beam pattern and a final dielectric film layer, wherein the final dielectric film layer serves as a support film of the final support beam pattern and the final non-support beam pattern; and removing the sacrificial layer.