A package structure of a micro speaker is provided. The package structure includes a substrate, a diaphragm, a coil, an etch stop layer, a carrier board, a permanent magnetic element, and package lid. The substrate has a hollow chamber. The diaphragm is suspended over the hollow chamber. The coil is embedded in the diaphragm. The etch stop layer is positioned below the coil and overlaps the coil in the direction that is perpendicular to the top surface of the diaphragm. The etch stop layer is made of a metal material. The carrier board is disposed on the bottom surface of the substrate. The permanent magnetic element is disposed on the carrier board and in the hollow chamber. The package lid is wrapped around the substrate and the diaphragm, and has a lid opening that exposes a portion of the top surface of the diaphragm.

A membrane is formed through processes including depositing a first piezoelectrical layer, depositing a first electrode layer over the first piezoelectrical layer, patterning the first electrode layer to form a first electrode, depositing a second piezoelectrical layer over the first electrode, depositing a second electrode layer over the second piezoelectrical layer, patterning the second electrode layer to form a second electrode, and depositing a third piezoelectrical layer over the second electrode. The third piezoelectrical layer, the second piezoelectrical layer, and the first piezoelectrical layer are etched to form a through-hole. The through-hole is laterally spaced apart from the first electrode and the second electrode. A first contact plug and a second contact plug are then formed to electrically connect to the first electrode and the second electrode, respectively.

Microphones including a housing defining a cavity, a plurality of conductors positioned within the cavity, at least one dielectric bar positioned within the cavity, and a transducer diaphragm. The conductors are structured to move in response to pressure changes while the housing remains fixed. A first conductor generates first electrical signals responsive to the pressure changes resulting from changes in an atmospheric pressure. A second conductor generates second electrical signals responsive to the pressure changes resulting from acoustic activity. The dielectric bar is fixed with respect to the cavity and remains fixed under the pressure changes. The dielectric bar is adjacent to at least one of the conductors. In response to an applied pressure that is an atmospheric pressure and/or an acoustic pressure, the transducer diaphragm exerts a force on the housing and displaces at least a portion of conductors with respect to the dielectric bar.

A MEMS actuator comprising a frame structure and at least one actuator arm. The actuator arm is connected at a first end to the frame structure and at a second end to an actuator body. The MEMS actuator is characterized in that the at least one actuator arm has a meander structure comprising two or more actuator sections. The two or more actuator sections are oriented substantially perpendicular to the longitudinal axis of the actuator arm. Furthermore, the two or more actuator sections comprise at least one layer of an actuator material, wherein a movement of the actuator body can be effected by actuating the two or more actuator sections. Further disclosed is a method for producing the MEMS actuator.

A method includes forming a bumpstop from a first intermetal dielectric (IMD) layer and forming a via within the first IMD, wherein the first IMD is disposed over a first polysilicon layer, and wherein the first polysilicon layer is disposed over another IMD layer that is disposed over a substrate. The method further includes depositing a second polysilicon layer over the bumpstop and further over the via to connect to the first polysilicon layer. A standoff is formed over a first portion of the second polysilicon layer, and wherein a second portion of the second polysilicon layer is exposed. The method includes depositing a bond layer over the standoff.

A device includes a substrate and an intermetal dielectric (IMD) layer disposed over the substrate. The device also includes a first plurality of polysilicon layers disposed over the IMD layer and over a bumpstop. The device also includes a second plurality of polysilicon layers disposed within the IMD layer. The device includes a patterned actuator layer with a first side and a second side, wherein the first side of the patterned actuator layer is lined with a polysilicon layer, and wherein the first side of the patterned actuator layer faces the bumpstop. The device further includes a standoff formed over the IMD layer, a via through the standoff making electrical contact with the polysilicon layer of the actuator and a portion of the second plurality of polysilicon layers and a bond material disposed on the second side of the patterned actuator layer.

A MEMS sensor includes a semiconductor chip that has a first principal surface and a second principal surface and that has a cavity, a frame portion that forms a bottom portion and a side portion of the cavity, and a movable portion that is formed on the side of the first principal surface and that is supported by the frame portion in a floating state with respect to the cavity, and, in the MEMS sensor, the frame portion has a stepped surface formed at a height position between the bottom portion of the cavity and the first principal surface, and the movable portion includes a main body portion facing the cavity in a first direction and an extension portion that extends from the main body portion toward an upper region of the stepped surface in a second direction and that faces the stepped surface in the first direction.

In one example, a method comprises forming a first layer on a substrate surface, forming an opening in the first layer, forming a second layer on the first layer and in the opening, and forming a photoresist layer on the second layer, in which the photoresist layer has a first curved surface over a first part of the first layer and over the opening. The method further comprises etching the photoresist layer and a second part of the second layer over the first part of the first layer to form a second curved surface on the second part of the second layer, and forming a mirror element and a support structure in the second layer, including by etching a third part of the second layer and removing the first layer.

There is provided a method of analyzing data obtained from an etching apparatus for micromachining a wafer using plasma. This method includes the following steps: acquiring the plasma light-emission data indicating light-emission intensities at a plurality of different wavelengths and times, the plasma light-emission data being measured under a plurality of different etching processing conditions, and being obtained at the time of the etching processing, evaluating the relationship between changes in the etching processing conditions and changes in the light-emission intensities at the plurality of different wavelengths and times with respect to the wavelengths and times of the plasma light-emission data, and identifying the wavelength and the time of the plasma light-emission data based on the evaluation result, the wavelength and the time being to be used for the adjustment of the etching processing condition.

There is provided a method of analyzing data obtained from an etching apparatus for micromachining a wafer using plasma. This method includes the following steps: acquiring the plasma light-emission data indicating light-emission intensities at a plurality of different wavelengths and times, the plasma light-emission data being measured under a plurality of different etching processing conditions, and being obtained at the time of the etching processing, evaluating the relationship between changes in the etching processing conditions and changes in the light-emission intensities at the plurality of different wavelengths and times with respect to the wavelengths and times of the plasma light-emission data, and identifying the wavelength and the time of the plasma light-emission data based on the evaluation result, the wavelength and the time being to be used for the adjustment of the etching processing condition.