Described are a low temperature plasma reaction device and a hydrogen sulfide decomposition method. The reaction device includes: a first cavity; a second cavity, the second cavity being embedded inside or outside the first cavity; an inner electrode, the inner electrode being arranged in the first cavity; an outer electrode; and a barrier dielectric arranged between the outer electrode and the inner electrode. The hydrogen sulfide decomposition method includes: implementing dielectric barrier discharge at the outer electrode and the inner electrode of the low temperature plasma reaction device, introducing a raw material gas containing hydrogen sulfide into the first cavity to implement a hydrogen sulfide decomposition method, and continuously introducing a thermally conductive medium into the second cavity in order to control the temperature of the first cavity of the low temperature plasma reaction device.

Devices suitable for use in an advanced oxidation method for organic and inorganic pollutants deploying OH* radicals and ozone is disclosed. Optionally, a first discharge device, providing OH* radicals and second discharge device providing ozone, are combined to provide desirable chemical and biocidal characteristics. Further, efficient mixing systems for transferring the radicals to the target fluid are disclosed.

System for processing material to generate syngas in a modular architecture may include a plurality of primary reactor chambers and a shared secondary reactor chamber. Each primary reactor chamber includes electrodes protruding into the chamber, the electrodes operable to generate an arc capable to generate first-stage gas from breakdown of the material when electricity is applied to the electrodes. The secondary reactor chamber is operable to receive the first-stage gas generated by the plurality of primary reactor chambers and to receive water vapour. The gas generated within the plurality of primary reactor chambers combine and interact with the water vapour to form second-stage gas. Turbulence can be generated within the secondary reactor chamber to improve mixing of the first-stage gas with the water vapour. Powering of each of the primary reactor chambers can be done with a different phase of power from a multi-phase input to ensure balanced power utilization.

A device and a process to propagate molecular growth of hydrocarbons, either straight or branched chain structures, that naturally occur in the gas phase to a molecular size sufficient to shift the natural occurring phase to a liquid or solid state is provided. According to one embodiment, the device includes a grounded reactor vessel having a gas inlet, a liquid outlet, and an electrode within the vessel; a power supply coupled to the electrode for creating an electrostatic field within the vessel for converting the gas to a liquid and or solid state.

A device and a process to propagate molecular growth of hydrocarbons, either straight or branched chain structures, that naturally occur in the gas phase to a molecular size sufficient to shift the natural occurring phase to a liquid or solid state is provided. According to one embodiment, the device includes a grounded reactor vessel having a gas inlet, a liquid outlet, and an electrode within the vessel; a power supply coupled to the electrode for creating an electrostatic field within the vessel for converting the gas to a liquid and or solid state.

A plasma gate device comprises a housing, a gas inlet, first and second dielectrics, and first, second, and third electrodes. The housing includes an internal reactor chamber. The gas inlet receives a source gas that flows to the reactor chamber. The first and second dielectrics are spaced apart from one another, with each dielectric including an upper surface and a lower surface. The two dielectrics are oriented such that the lower surface of the first dielectric faces the upper surface of the second dielectric. The first and second dielectrics form boundaries of the reactor chamber. The first electrode receives a first electric voltage. The second electrode receives a second electric voltage. The first and second electric voltages in combination generate an electric field in the reactor chamber through which the source gas flows creating a positive ion plasma and a cloud of electrons. The third electrode attracts the electrons.

A production apparatus for fine particles includes a vacuum chamber, a material feeding device connected to the vacuum chamber and feeding material particles from a material feeding port into the vacuum chamber, electrodes arranged in the vacuum chamber for generating plasma and a fine particle collection device connected to the vacuum chamber and collecting fine particles. The fine particles are produced from the material by generating electric discharge inside the vacuum chamber. The apparatus includes an inner chamber which forms an outside space with respect to the vacuum chamber installed between a wall of the vacuum chamber and a plasma generation region and gas supply pipes which supply a gas to the outside space between the wall of the vacuum chamber and a wall of the inner chamber.

The present invention describes a PEF (pulsed electric field) chamber comprising a PEF treatment tube 2, a casing 3 and at least two electrode 5 units 4, 5, wherein said at least two electrode units 4, 5 are insertable to be fixated in the casing 3 and into the PEF treatment tube 2.

A plasma gate device comprises a housing, a gas inlet, first and second dielectrics, and first, second, and third electrodes. The housing includes an internal reactor chamber. The gas inlet receives a source gas that flows to the reactor chamber. The first and second dielectrics are spaced apart from one another, with each dielectric including an upper surface and a lower surface. The two dielectrics are oriented such that the lower surface of the first dielectric faces the upper surface of the second dielectric. The first and second dielectrics form boundaries of the reactor chamber. The first electrode receives a first electric voltage. The second electrode receives a second electric voltage. The first and second electric voltages in combination generate an electric field in the reactor chamber through which the source gas flows creating a positive ion plasma and a cloud of electrons. The third electrode attracts the electrons.

A plasma gate device comprises a housing, a gas inlet, first and second dielectrics, and first, second, and third electrodes. The housing includes an internal reactor chamber. The gas inlet receives a source gas that flows to the reactor chamber. The first and second dielectrics are spaced apart from one another, with each dielectric including an upper surface and a lower surface. The two dielectrics are oriented such that the lower surface of the first dielectric faces the upper surface of the second dielectric. The first and second dielectrics form boundaries of the reactor chamber. The first electrode receives a first electric voltage. The second electrode receives a second electric voltage. The first and second electric voltages in combination generate an electric field in the reactor chamber through which the source gas flows creating a positive ion plasma and a cloud of electrons. The third electrode attracts the electrons.