Process for manufacturing a microfluidic device, wherein a sacrificial layer is formed on a semiconductor substrate; a carrying layer is formed on the sacrificial layer; the carrying layer is selectively removed to form at least one release opening extending through the carrying layer; a permeable layer of a permeable semiconductor material is formed in the at least one release opening; the sacrificial layer is selectively removed through the permeable layer to form a fluidic chamber; the at least one release opening is filled with non-permeable semiconductor filling material, forming a monolithic body having a membrane region; an actuator element is formed on the membrane region and a cap element is attached to the monolithic body and surrounds the actuator element.

A liquid discharge head includes a nozzle member. The nozzle member includes a nozzle, a deformable laminar member, and an electromechanical transducer. The nozzle discharges liquid. The deformable laminar member has an opening forming the nozzle. The electromechanical transducer is disposed around the opening. The nozzle member is warped with respect to a discharge-side plane of the nozzle member in a surrounding area of the nozzle when no voltage is applied to the electromechanical transducer.

An actuator includes: a frame having a recess; an actuator substrate including a common chamber; a damper between the frame and the actuator substrate, the damper defining a part of a wall of the common chamber of the actuator substrate. The damper includes multiple layers laminated in a lamination direction, and the multiple layers is symmetrical in the lamination direction with respect to a center of the damper in the lamination direction.

A liquid discharge head includes: a first member; and a second member bonded to the first member, wherein the first member has: a first protrusion protruding to the second member, a second protrusion protruding to the second member, the second protrusion having a height different from the first protrusion, the second member includes: a first portion bonded to the first protrusion with a first adhesive; and a second portion bonded to the second protrusion with a second adhesive, the second portion having a height different from the first portion, and a type of the second adhesive is different from a type of the first adhesive.

A head includes: a silicon substrate; an insulating film on the silicon substrate; an electrode wiring on the insulating film; a flexible wiring connected to the electrode wiring; and a conductive film electrically connects the flexible wiring and the electrode wiring in a bonding area. The silicon substrate has an exposed area on a surface of the silicon substrate facing the insulating film, and the exposed area is in a vicinity of the bonding area and is exposed from the insulating film.

There is provided an MEMS device in which a first substrate provided with a driving element and a second substrate protecting the driving element are bonded to each other with an adhesive, in which the driving element is formed inside the space surrounded by the adhesive between the first substrate and the second substrate, an open hole which communicates with the space and the outside of the adhesive is formed on the adhesive, and an end of the outside of the open hole is provided to be with an end of the first substrate and an end of the second substrate.

A piezoelectric element includes: a first electrode; an oxide layer formed on the first electrode; a piezoelectric layer formed on the oxide layer and containing potassium, sodium, and niobium; and a second electrode formed on the piezoelectric layer. When a potential difference of 10 V is applied between the first electrode and the second electrode, a current density of a leak current differs by 10,000 times or more between a case in which the first electrode is set at a high potential and a case in which the second electrode is set at a high potential.

A piezoelectric substrate includes: a substrate; a first electrode formed on the substrate; and a piezoelectric layer formed on the first electrode and containing potassium, sodium, and niobium. A full width at half maximum of an X-ray intensity peak on a plane (100) of the piezoelectric layer in a Psi axis-direction scan result of an X-ray diffraction measurement in which a surface of the piezoelectric layer is irradiated with X-rays at an angle of 54.74° from a direction perpendicular to the surface is more than 0° and 1.2° or less.

A flow passage forming member includes flow passage forming member main bodies 140 and 146 that are formed of a resin material and define at least a part of a flow passage, a metal protective film 200 that is provided on a surface of the flow passage forming member main body 140 and a surface of the flow passage forming member main body 146 defining at least the flow passage and is formed of a metal material, and a protective film 210 that is laminated on the metal protective film 200 and contains an oxide or a nitride of at least on element selected from the group consisting of tantalum (Ta), titanium (Ti), zirconium (Zr), niobium (bib), vanadium (V), hafnium (Hf), silicon (Si), aluminum (Al), tungsten (W), and yttrium (Y).

A functional ink that includes a precursor sol-gel solution and a solvent is provided. The precursor sol-gel solution is used for forming an oxide dielectric film having a perovskite structure represented by a general formula ABO.sub.3, and has been subjected to a partial hydrolysis process in which a viscosity change resulting from the partial hydrolysis process is controlled to be less than or equal to 50%, and water contained in the precursor sol-gel solution is controlled to be greater than or equal to 0.50 times and less than or equal to 10 times by molar ratio with respect to a B site atom contained in the precursor sol-gel solution. The functional ink has a metal oxide concentration and a viscosity that renders the functional ink suitable for being discharged from a nozzle of a liquid droplet discharge apparatus included in a thin film fabrication apparatus.