Provided is a manufacturing method for a film containing a condensate of hydrolyzable silane compounds, the manufacturing method including: forming, on a base material, a layer containing a condensate of a hydrolyzable silane compound having an epoxy group and a hydrolyzable silane compound having a fluorine-containing group, and a solvent; and curing the layer, the solvent containing one of ethanol and methanol serving as a first alcohol component, and at least one kind of alcohol having a boiling point of from 90° C. to 200° C. serving as a second alcohol component, the solvent having a content of the second alcohol component of from 2.00 mass % to 60.00 mass %, the condensate having a degree of condensation of from 20% to 80%.

A fluid ejection device including a printhead die having a plurality of layers, including a single metal layer, and having an integrated ink level sensor. The ink level sensor includes an ink chamber above the metal layer, a metal plate of a sense capacitor disposed in the metal layer, and a clearing resistor circuit disposed in the metal layer including four clearing resistors arranged in a surround-4 configuration about the metal plate and electrically connected in parallel between a voltage potential and ground, wherein adjacent ends of at least two clearing resistors are not directly connected to one another so as to leave a gap between the adjacent ends in the metal layer. A metal lead in the metal layer extends through the gap to the metal plate.

To apply an anti-wetting coating to a substrate of a semiconductor material, a method includes applying to a support a solution of a hydrocarbon comprising at least one unsaturated bond and, optionally, at least one hetero-atom for obtaining a layer of hydrocarbons. The method also includes treating at least one surface of the substrate of the semiconductor material with an acid. The layer of hydrocarbons is transferred from the support to the surface of the substrate of the semiconductor material. The layer of hydrocarbons is chemically coupled with the surface of the substrate of the semiconductor material.

A liquid ejection head has at least a structure including an ejection orifice forming member having an ejection orifice for ejecting a liquid and a flow path communicating with the ejection orifice and a flow path forming substrate having a liquid introduction flow path communicating with the flow path and supplying the liquid, and includes: a first titanium oxide film with a pure water contact angle of 40° or less; and a second titanium oxide film with a pure water contact angle of 70° or more, wherein the first titanium oxide film covers the structure including inner walls of the flow path and the liquid introduction flow path and is exposed in the flow path and the liquid introduction flow path, and the second titanium oxide film has a portion covering the first titanium oxide film in a vicinity of an opening end.

There is provided a liquid jetting apparatus, including: a first pressure chamber and a second pressure chamber arranged in a first direction; a first insulating film covering the first and second pressure chambers; a first piezoelectric element arranged to face the first pressure chamber with the first insulating film being intervened therebetween; a second piezoelectric element arranged to face the second pressure chamber with the first insulating film being intervened therebetween; a trace arranged between the first and the second piezoelectric elements adjacent to each other in the first direction; and a second insulating film covering the trace. An end, in the first direction, of a part of the second insulating film covering the trace between the first piezoelectric element and the second piezoelectric element is positioned inside an end of a partition wall partitioning the first pressure chamber and the second pressure chamber.

A method is provided for manufacturing a piezoelectric device including a piezoelectric element that is disposed above a diaphragm and that has a multilayer structure including a first electrode disposed above the diaphragm, a piezoelectric layer disposed on the first electrode, and a second electrode disposed on the piezoelectric layer. The method includes forming the multilayer structure including the first electrode, the piezoelectric layer, and the second electrode above the diaphragm, forming a voltage application electrode extending outwardly from an end of the second electrode to cover a region located above the piezoelectric layer in an inactive section having no second electrode, applying a voltage between the first electrode and the second electrode, and removing the voltage application electrode.

A nozzle plate includes, on a substrate: at least a base layer; an intermediate layer; and a liquid repellent layer. The base layer contains a silane coupling agent A having reactive functional groups at both terminals and including a hydrocarbon chain and a benzene ring at an intermediate part. The intermediate layer contains an inorganic oxide. The liquid repellent layer contains a fluorine (F)-containing coupling agent B.

A method for processing a silicon substrate includes forming a structure having a bottom surface and a depth of 200 μm or more or 300 μm or more from a first surface of a silicon substrate, forming a protective film on an inner wall of the structure, and performing plasma etching so as to selectively remove the protective film disposed on the bottom surface of the structure with respect to the protective film disposed on the substantially perpendicular side wall of the structure, wherein the plasma etching is performed under the condition in which plasma with a sheath length at least 10 times the depth when the depth is 200 μm or more, or at least 5 time the depth when the depth is 300 μm or more, is generated and a mean free path of ions generated in the plasma is longer than the sheath length.

A reproduction method of a liquid ejecting head including: a process of filling the flow path with an electrolyte solution containing metal, and filling a space between an electrode capable of applying a voltage to between itself and the upper protective film and the upper protective film with the electrolyte solution; and a process of applying a voltage to between the upper protective film and the electrode to make the metal contained in the electrolyte solution deposit on the surface of the upper protective film.

A method for processing a thin film layer, for example to form an ink jet printhead, can include the use of an adhesive layer that can be converted from a first state having a first adhesive force to a second state having a second adhesive force, where the first state is stronger than the second state. Conversion from the first state to the second state can be performed using a suitable treatment. In an embodiment, the adhesive layer may be a thermal release material that is converted during a heat treatment. In another embodiment, the adhesive layer may be a layer that is sensitive to ultraviolet (UV) light, and is converted during exposure to UV light emitted by a UV light source.