Patent classifications
B81C2201/0138
System Implementing Machine Learning in Complex Multivariate Wafer Processing Equipment
A system for controlling processing state of a plasma process is provided. One example system includes a plasma reactor having a plurality of tuning knobs for making settings to operational conditions of the plasma reactor. A plurality of sensors of the plasma reactor is included, where each of the plurality of sensors is configured to produce a data stream of information during operation of the plasma reactor for carrying out the plasma process. A controller of the plasma reactor is configured to execute a multivariate processing that is configured to use as input desired processing state values that define intended measurable conditions within a processing environment of the plasma reactor and identify current plasma processing values. The multivariate processing uses a machine learning engine that receives as inputs the desired processing state values and data streams from the plurality of sensors during processing of the plasma process. The machine learning engine is configured to identify current processing state values used to produce a compensation vector, such that the compensation vector defines differences between the desired process state values and the current processing state values. The controller is further configured to execute a compensation processing operation that transforms the compensation vector expressed in terms of measured conditions within the processing environment to changes of specific one or more of the tuning knobs of the plasma reactor.
Selective patterning of titanium encapsulation layers
A method comprises forming an etch stop layer, a first titanium layer, a magnetic core, a second titanium layer, and patterning the first and second titanium layers. The etch stop layer is formed above a substrate. The first titanium layer is formed on the etch stop layer. The magnetic core is formed on the first titanium layer. The second titanium layer has a first portion encapsulating the magnetic core with the first titanium layer, and a second portion interfacing with the first titanium layer beyond the magnetic core. The patterning of the first and second titanium layers includes forming a mask over a magnetic core region and etching the first and second titanium layers exposed by the mask using a titanium etchant and a titanium oxide etchant.
Method and process of implementing machine learning in complex multivariate wafer processing equipment
Methods and systems for controlling processing state of a plasma reactor to initiate processing of production substrates and/or to determine a ready state of a reactor after the reactor has been cleaned and needs to be seasoned for subsequent production wafer processing are provided. The method initiate processing of a substrate in the plasma reactor using settings for tuning knobs of the plasma reactor that are approximated to achieve desired processing state values. A plurality of data streams are received from the plasma reactor during the processing of the substrate. The plurality of data streams are used to identify current processing state values. The method includes generating a compensation vector that identifies differences between the current processing state values and the desired processing state values. The generation of the compensation vector uses machine learning to improve and refile the identification and amount of compensation needed, as identified in the compensation vector. The method further includes transforming the compensation vector into adjustments to the settings for the tuning knobs and then applying the adjustment to the tuning knobs of the plasma reactor.
Method and Process of Implementing Machine Learning in Complex Multivariate Wafer Processing Equipment
Methods and systems for controlling processing state of a plasma reactor to initiate processing of production substrates and/or to determine a ready state of a reactor after the reactor has been cleaned and needs to be seasoned for subsequent production wafer processing are provided. The method initiate processing of a substrate in the plasma reactor using settings for tuning knobs of the plasma reactor that are approximated to achieve desired processing state values. A plurality of data streams are received from the plasma reactor during the processing of the substrate. The plurality of data streams are used to identify current processing state values. The method includes generating a compensation vector that identifies differences between the current processing state values and the desired processing state values. The generation of the compensation vector uses machine learning to improve and refile the identification and amount of compensation needed, as identified in the compensation vector. The method further includes transforming the compensation vector into adjustments to the settings for the tuning knobs and then applying the adjustment to the tuning knobs of the plasma reactor.
METHODS AND SYSTEMS FOR TRANSMISSION AND DETECTION OF FREE RADICALS
The present disclosure provides systems and methods for characterizing the interaction of free radicals with various materials and the use of known interactions to isolate free radical generation from free radical interaction with a target molecule.
SELECTIVE PATTERNING OF TITANIUM ENCAPSULATION LAYERS
A method comprises forming an etch stop layer, a first titanium layer, a magnetic core, a second titanium layer, and patterning the first and second titanium layers. The etch stop layer is formed above a substrate. The first titanium layer is formed on the etch stop layer. The magnetic core is formed on the first titanium layer. The second titanium layer has a first portion encapsulating the magnetic core with the first titanium layer, and a second portion interfacing with the first titanium layer beyond the magnetic core. The patterning of the first and second titanium layers includes forming a mask over a magnetic core region and etching the first and second titanium layers exposed by the mask using a titanium etchant and a titanium oxide etchant.
Selective patterning of an integrated fluxgate device
A method comprises forming an etch stop layer, a first titanium layer, a magnetic core, a second titanium layer, and patterning the first and second titanium layers. The etch stop layer is formed above a substrate. The first titanium layer is formed on the etch stop layer. The magnetic core is formed on the first titanium layer. The second titanium layer has a first portion encapsulating the magnetic core with the first titanium layer, and a second portion interfacing with the first titanium layer beyond the magnetic core. The patterning of the first and second titanium layers includes forming a mask over a magnetic core region and etching the first and second titanium layers exposed by the mask using a titanium etchant and a titanium oxide etchant.
Methods and systems for transmission and detection of free radicals
The present disclosure provides systems and methods for characterizing the interaction of free radicals with various materials and the use of known interactions to isolate free radical generation from free radical interaction with a target molecule.