In a substrate, a first flow channel opened in a first surface of a silicon base material having a crystal orientation of <110>, and a second flow channel opened in a second surface of the silicon base material opposite the first surface are formed to communicate with each other. The second flow channel has an opening width narrower than an opening width of the first flow channel, and a groove portion shallower than a depth of the second flow channel is formed close to the opening of the second flow channel in a region that is inside the opening of the first flow channel and outside the opening of the second flow channel in the second surface.

A manufacturing method for a structure includes preparing a dry film supported on one surface of a support; bonding the dry film to a substrate so that the dry film and the substrate are in contact with each other; performing first exposure of the dry film bonded to the substrate via the support; removing the support after the first exposure; performing second exposure of the dry film after the support is removed via a photomask; and developing the dry film after the first exposure and the second exposure.

In example implementations, a printhead die is provided. The printhead die includes a substrate, a chamber layer formed on the substrate, a plurality of printing fluid ejection chambers coupled to opposite sides of the chamber layer and along a length of the chamber layer, and a top hat layer formed on the chamber layer and the plurality of printing fluid ejection chambers. The chamber layer includes a void to store printing fluid. The top hat layer includes an initial unsupported top hat layer portion over the void, wherein the initial unsupported top hat layer portion comprises a first end that is narrower than a second end.

A liquid ejection head has at least a structure including an ejection orifice forming member having an ejection orifice for ejecting a liquid and a flow path communicating with the ejection orifice and a flow path forming substrate having a liquid introduction flow path communicating with the flow path and supplying the liquid, and includes: a first titanium oxide film with a pure water contact angle of 40° or less; and a second titanium oxide film with a pure water contact angle of 70° or more, wherein the first titanium oxide film covers the structure including inner walls of the flow path and the liquid introduction flow path and is exposed in the flow path and the liquid introduction flow path, and the second titanium oxide film has a portion covering the first titanium oxide film in a vicinity of an opening end.

A method for manufacturing a microstructure comprising cured products of photosensitive resin compositions, the method comprising: a step of forming at least two layers of the photosensitive resin compositions each comprising a photopolymerization initiator; a step of subjecting each of the formed at least two layers of the photosensitive resin compositions to patterning exposure; and a step of collectively developing the exposed at least two layers of the photosensitive resin compositions to obtain a microstructure, wherein in the at least two layers of the photosensitive resin compositions, 90% by mass or more of the photopolymerization initiators contained in at least one of the two adjacent layers of the photosensitive resin compositions is a nonionic photopolymerization initiator.

Techniques are provided for making a funnel-shaped nozzle in a substrate. The process can include forming a first opening having a first width in a top layer of a substrate, forming a patterned layer of photoresist on the top surface of the substrate, the patterned layer of photoresist including a second opening, the second opening having a second width larger than the first width, reflowing the patterned layer of photoresist to form curved side surfaces terminating on the top surface of the substrate, etching a second layer of the substrate through the first opening in the top layer of the substrate to form a straight-walled recess, the straight-walled recess having the first width and a side surface substantially perpendicular to the top surface of the semiconductor substrate.

In one example, a liquid ejection device. The device includes a first metal layer over a substrate, a dielectric layer over the first metal layer, and an orifice through the dielectric layer to the first metal layer. The device also includes a second metal layer over the dielectric layer and partially filling the orifice to form a via to electrical connect the two metal layers. The via has a depth-to-width ratio of at least 0.4. The device further includes a passivation stack covering the second metal layer including all interior surfaces of the via. The stack includes an ALD-deposited layer formed by atomic layer deposition.

A crystal pattern forming method includes: an electromagnetic wave absorbing layer forming process for forming an electromagnetic wave absorbing layer on one of surfaces of a substrate; an amorphous film forming process for forming an amorphous film on the electromagnetic wave absorbing layer; a mask forming process for forming an electromagnetic wave blocking mask for blocking an electromagnetic wave on the other one of the surfaces of the substrate; and a crystallizing process for causing the substrate to be irradiated with the electromagnetic wave from the other one of the surfaces of the substrate through the electromagnetic wave blocking mask to crystallize a given region in the amorphous film. In the mask forming process, a recessed structure is formed on the other one of the surfaces of the substrate, by selectively removing the other one of the surfaces of the substrate to form a recessed portion.

A method of manufacturing a plurality of semiconductor chips for a liquid discharge head from a substrate includes forming trenches of a linear form through etching from the second surface along intended cutting portions, forming modified portions in the substrate by irradiating a laser beam from the first surface side along the intended cutting portions, and splitting the substrate into the plurality of semiconductor chips for a liquid discharge head, by cutting the substrate with stress applied to the modified portions. The intended cutting portions include inclined portions extending in a direction inclined with respect to a crystal orientation plane of the substrate and uninclined portions extending in a direction along the crystal orientation plane of the substrate, and the trenches are formed at least along the inclined portions.

A liquid discharge head comprising a silicon substrate; an insulating layer A formed on a first surface of the silicon substrate, a protective layer A that includes metal oxide and is formed on the insulating layer A, the structure that is formed on the protective layer A by direct contact with the protective layer A, includes organic resin, and forms a part of a flow path for liquid, and an element that is formed on a second surface of the silicon substrate on a side opposite to the first surface, and is configured to generate energy used for discharging the liquid.