In a substrate, a first flow channel opened in a first surface of a silicon base material having a crystal orientation of <110>, and a second flow channel opened in a second surface of the silicon base material opposite the first surface are formed to communicate with each other. The second flow channel has an opening width narrower than an opening width of the first flow channel, and a groove portion shallower than a depth of the second flow channel is formed close to the opening of the second flow channel in a region that is inside the opening of the first flow channel and outside the opening of the second flow channel in the second surface.

A liquid ejection head has at least a structure including an ejection orifice forming member having an ejection orifice for ejecting a liquid and a flow path communicating with the ejection orifice and a flow path forming substrate having a liquid introduction flow path communicating with the flow path and supplying the liquid, and includes: a first titanium oxide film with a pure water contact angle of 40° or less; and a second titanium oxide film with a pure water contact angle of 70° or more, wherein the first titanium oxide film covers the structure including inner walls of the flow path and the liquid introduction flow path and is exposed in the flow path and the liquid introduction flow path, and the second titanium oxide film has a portion covering the first titanium oxide film in a vicinity of an opening end.

In an example, a printhead includes a memristor, in which the memristor may include a first electrode, a second electrode positioned in a crossed relationship with the first electrode to form a junction, and a switching element positioned at the junction between the first electrode and the second electrode, in which the switching layer includes a via formed in the switching element to reduce an area of the switching element.

There is provided a liquid jetting apparatus, including: a first pressure chamber and a second pressure chamber arranged in a first direction; a first insulating film covering the first and second pressure chambers; a first piezoelectric element arranged to face the first pressure chamber with the first insulating film being intervened therebetween; a second piezoelectric element arranged to face the second pressure chamber with the first insulating film being intervened therebetween; a trace arranged between the first and the second piezoelectric elements adjacent to each other in the first direction; and a second insulating film covering the trace. An end, in the first direction, of a part of the second insulating film covering the trace between the first piezoelectric element and the second piezoelectric element is positioned inside an end of a partition wall partitioning the first pressure chamber and the second pressure chamber.

A method is provided for manufacturing a piezoelectric device including a piezoelectric element that is disposed above a diaphragm and that has a multilayer structure including a first electrode disposed above the diaphragm, a piezoelectric layer disposed on the first electrode, and a second electrode disposed on the piezoelectric layer. The method includes forming the multilayer structure including the first electrode, the piezoelectric layer, and the second electrode above the diaphragm, forming a voltage application electrode extending outwardly from an end of the second electrode to cover a region located above the piezoelectric layer in an inactive section having no second electrode, applying a voltage between the first electrode and the second electrode, and removing the voltage application electrode.

Provided are a vibrating plate, a first electrode provided over the vibrating plate, a piezoelectric layer provided over the first electrode, and a second electrode provided over the piezoelectric layer are provided. The piezoelectric layer is interposed between the first electrode and the second electrode. The piezoelectric layer includes an active portion of which at least one end portion is defined by the first electrode, and a non-active portion provided on an outside of the end portion of the first electrode for defining the active portion. The vibrating plate includes a first vibration portion under the non-active portion and a second vibration portion on an outside of the first vibration portion. The second vibration portion includes a taper part having the thickness which is increased toward the first vibration portion.

In one embodiment, a method for manufacturing an aperture plate includes depositing a releasable seed layer above a substrate, applying a first patterned photolithography mask above the releasable seed layer, the first patterned photolithography mask having a negative pattern to a desired aperture pattern, electroplating a first material above the exposed portions of the releasable seed layer and defined by the first mask, applying a second photolithography mask above the first material, the second photolithography mask having a negative pattern to a first cavity, electroplating a second material above the exposed portions of the first material and defined by the second mask, removing both masks, and etching the releasable seed layer to release the first material and the second material. The first and second material form an aperture plate for use in aerosolizing a liquid. Other aperture plates and methods of producing aperture plates are described according to other embodiments.

In an embodiment, a fluid ejection device includes a thin-film layer formed over a substrate. A primer layer is formed over the thin-film layer, and a chamber layer is formed over the primer layer that defines a fluidic channel leading to a firing chamber. The fluid ejection device includes a slot that extends through the substrate and into the chamber layer through an ink feed hole in the thin-film layer. The fluid ejection device also includes a particle tolerant extension of the primer layer that protrudes into the slot. In some implementations, the particle tolerant primer layer extension extends across a full width of the slot.

A method for processing a silicon substrate includes forming a structure having a bottom surface and a depth of 200 μm or more or 300 μm or more from a first surface of a silicon substrate, forming a protective film on an inner wall of the structure, and performing plasma etching so as to selectively remove the protective film disposed on the bottom surface of the structure with respect to the protective film disposed on the substantially perpendicular side wall of the structure, wherein the plasma etching is performed under the condition in which plasma with a sheath length at least 10 times the depth when the depth is 200 μm or more, or at least 5 time the depth when the depth is 300 μm or more, is generated and a mean free path of ions generated in the plasma is longer than the sheath length.

There is provided a liquid jet apparatus including a channel substrate having a plurality of pressure chambers and a film covering the plurality of pressure chambers, a piezoelectric layer, a plurality of individual electrodes, a common electrode, and a trace extending from one of the plurality of individual electrodes to pass through between two adjacent individual electrodes of the plurality of individual electrodes. An opening of the piezoelectric layer is provided between the two adjacent individual electrodes, and a metallic film is formed to cover the trace in such an area of the trace as to overlap with the opening positioned between the two adjacent individual electrodes.