A substrate having a recessed portion, a diaphragm, and a piezoelectric actuator are provided, the diaphragm includes a first layer containing silicon as a constituent element, and a third layer disposed between the first layer and the piezoelectric actuator and containing zirconium as a constituent element, and a laminated side surface of the first layer and the third layer is covered with a moisture-resistant protective film containing at least one selected from the group made of oxide, nitride, metal, and diamond-like carbon.

In a substrate, a first flow channel opened in a first surface of a silicon base material having a crystal orientation of <110>, and a second flow channel opened in a second surface of the silicon base material opposite the first surface are formed to communicate with each other. The second flow channel has an opening width narrower than an opening width of the first flow channel, and a groove portion shallower than a depth of the second flow channel is formed close to the opening of the second flow channel in a region that is inside the opening of the first flow channel and outside the opening of the second flow channel in the second surface.

A manufacturing method for a structure includes preparing a dry film supported on one surface of a support; bonding the dry film to a substrate so that the dry film and the substrate are in contact with each other; performing first exposure of the dry film bonded to the substrate via the support; removing the support after the first exposure; performing second exposure of the dry film after the support is removed via a photomask; and developing the dry film after the first exposure and the second exposure.

A liquid ejection head has at least a structure including an ejection orifice forming member having an ejection orifice for ejecting a liquid and a flow path communicating with the ejection orifice and a flow path forming substrate having a liquid introduction flow path communicating with the flow path and supplying the liquid, and includes: a first titanium oxide film with a pure water contact angle of 40° or less; and a second titanium oxide film with a pure water contact angle of 70° or more, wherein the first titanium oxide film covers the structure including inner walls of the flow path and the liquid introduction flow path and is exposed in the flow path and the liquid introduction flow path, and the second titanium oxide film has a portion covering the first titanium oxide film in a vicinity of an opening end.

There is provided an MEMS device in which a first substrate provided with a driving element and a second substrate protecting the driving element are bonded to each other with an adhesive, in which the driving element is formed inside the space surrounded by the adhesive between the first substrate and the second substrate, an open hole which communicates with the space and the outside of the adhesive is formed on the adhesive, and an end of the outside of the open hole is provided to be with an end of the first substrate and an end of the second substrate.

A crystal pattern forming method includes: an electromagnetic wave absorbing layer forming process for forming an electromagnetic wave absorbing layer on one of surfaces of a substrate; an amorphous film forming process for forming an amorphous film on the electromagnetic wave absorbing layer; a mask forming process for forming an electromagnetic wave blocking mask for blocking an electromagnetic wave on the other one of the surfaces of the substrate; and a crystallizing process for causing the substrate to be irradiated with the electromagnetic wave from the other one of the surfaces of the substrate through the electromagnetic wave blocking mask to crystallize a given region in the amorphous film. In the mask forming process, a recessed structure is formed on the other one of the surfaces of the substrate, by selectively removing the other one of the surfaces of the substrate to form a recessed portion.

A method of manufacturing a plurality of semiconductor chips for a liquid discharge head from a substrate includes forming trenches of a linear form through etching from the second surface along intended cutting portions, forming modified portions in the substrate by irradiating a laser beam from the first surface side along the intended cutting portions, and splitting the substrate into the plurality of semiconductor chips for a liquid discharge head, by cutting the substrate with stress applied to the modified portions. The intended cutting portions include inclined portions extending in a direction inclined with respect to a crystal orientation plane of the substrate and uninclined portions extending in a direction along the crystal orientation plane of the substrate, and the trenches are formed at least along the inclined portions.

There is provided a method for producing a liquid transport apparatus includes: a pressure chamber plate partially defining a pressure chamber that communicates with a nozzle for ejecting liquid; an insulating ceramics layer located on a surface of the pressure chamber plate to cover the pressure chamber; a piezoelectric layer located on the insulating ceramics layer; and a first electrode located on the piezoelectric layer. The method includes: forming the insulating ceramics layer on the pressure chamber plate by heating an insulating ceramic material; forming the piezoelectric layer and the first electrode on the insulating ceramics layer; forming the piezoelectric layer including annealing the piezoelectric layer at the annealing temperature; and forming the pressure chamber by removing a part of the pressure chamber plate so that a part of the insulating ceramics layer is exposed on the pressure chamber.

A liquid discharge head comprising a silicon substrate; an insulating layer A formed on a first surface of the silicon substrate, a protective layer A that includes metal oxide and is formed on the insulating layer A, the structure that is formed on the protective layer A by direct contact with the protective layer A, includes organic resin, and forms a part of a flow path for liquid, and an element that is formed on a second surface of the silicon substrate on a side opposite to the first surface, and is configured to generate energy used for discharging the liquid.

A planarization layer and method therefor. The planarization layer has a thickness ranging from about 2 to about 3 microns, and contains from about 8.0 to about 8.5 wt. % photoacid generator; from about 2 to about 3.6 wt. % photoinitiator; from about 0.35 to about 0.5 wt. % green dye; from about 35 to about 46 wt. % multifunctional epoxy compound; from about 35 to about 50 wt. % of one or more difunctional epoxy compounds; and from about 1 to about 2.6 wt. % silane adhesion promoter, wherein all weight percent is based on a total weight of the layer devoid of solvent.