Patent classifications
B41J2/1646
WAFER STRUCTURE
A wafer structure is disclosed and includes a chip substrate and at least one inkjet chip. The chip substrate is a silicon substrate fabricated by a semiconductor process on a wafer of at least 12 inches. The inkjet chip is directly formed on the chip substrate by the semiconductor process, whereby the wafer is diced, and the inkjet chip is produced, to be implemented for inkjet printing. The inkjet chip includes plural ink-drop generators produced by the semiconductor process and formed on the chip substrate. The ink-drop generators are arranged in a longitudinal direction to form plural longitudinal axis array groups having a pitch maintained between two adjacent ink-drop generators in the longitudinal direction, and arranged in a horizontal direction to form plural horizontal axis array groups having a central stepped pitch equal to or less than 1/600 inches maintained between two adjacent ink-drop generators in the horizontal direction.
Wafer structure
A wafer structure is disclosed and includes a chip substrate and at least one inkjet chip. The chip substrate is a silicon substrate fabricated by a semiconductor process. The inkjet chip is directly formed on the chip substrate by the semiconductor process, whereby the wafer structure is diced, and the inkjet chip is produced, to be implemented for inkjet printing. The inkjet chip includes a plurality of ink-drop generators produced by the semiconductor process and formed on the chip substrate. Each of the ink-drop generators includes a barrier layer, an ink-supply chamber and a nozzle, and the ink-supply chamber and the nozzle are integrally formed in the barrier layer.
PIEZOELECTRIC DEVICE, LIQUID EJECTING HEAD, LIQUID EJECTING APPARATUS, AND METHOD OF MANUFACTURING PIEZOELECTRIC DEVICE
A piezoelectric body layer of a first area has (100) plane preferential orientation, and a (100) plane orientation ratio of the piezoelectric body layer of a second area is lower than a (100) plane orientation ratio of the piezoelectric body layer of the first area, when one area far from an end portion of a second electrode is the first area, and one area near the end portion of the second electrode is the second area, of two areas of the second electrode in a second direction intersecting a first direction.
Device using a piezoelectric element and method for manufacturing the same
An inkjet printing head 1 includes an actuator substrate 2 having pressure chambers (cavities) 7, a movable film formation layer 10 including movable films 10A disposed above the pressure chambers 7 and defining top surface portions of the pressure chambers 7, and piezoelectric elements 9 formed above the movable films 10A. Each piezoelectric element 9 includes a lower electrode 11 formed above a movable film 10A, a piezoelectric film 12 formed above the lower electrode 11, and an upper electrode 13 formed above the piezoelectric film 12. The piezoelectric film 12 includes an active portion 12A with an upper surface in contact with a lower surface of an upper electrode 13 and an inactive portion 12B led out in a direction along a front surface of the movable film formation layer 10 from an entire periphery of a side portion of the active portion 12A and having a thickness thinner than that of the active portion 12A.
Liquid ejection head substrate and manufacturing method of the same
An electrode pad portion of a liquid ejection head substrate includes a layer containing one of an iridium metal and an iridium alloy, and at least a portion of a cavitation resistant layer is provided in the same layer with the same material as the layer containing one of the iridium metal and the iridium alloy.
PIEZOELECTRIC ELEMENT, DROPLET DISPENSING HEAD, ACTUATOR, AND VIBRATOR
A piezoelectric element includes: a first electrode formed at a vibration plate; a seed layer formed at the first electrode; a piezoelectric film containing potassium, sodium, and niobium and formed at the seed layer; and a second electrode formed at the piezoelectric film. The piezoelectric film contains lithium and one or more first transition elements. The seed layer contains bismuth. When the piezoelectric film is divided into two equal parts in a stacking direction, the second electrode side is defined as a first region, and the first electrode side is defined as a second region, a bismuth intensity obtained by SIMS measurement at a boundary between the first region and the second region is equal to or less than 1/500 of a maximum bismuth intensity obtained by the SIMS measurement of the piezoelectric film.
LIQUID DISCHARGE HEAD, LIQUID DISCHARGE DEVICE, AND ACTUATOR
A liquid discharge head includes a diaphragm, a first electrode, a piezoelectric body, and a second electrode which are stacked in this order in a first direction, in which when a region of the piezoelectric body interposed between the first electrode and the second electrode is set as a first region, a region of the piezoelectric body other than the first region is set as a second region, a portion of the diaphragm that overlaps a boundary between the first region and the second region when viewed in the first direction is set as a first portion, and a portion of the diaphragm that is different from the first portion and overlaps the first region when viewed in the first direction is set as a second portion, a thickness of the first portion is smaller than a thickness of the second portion.
LIQUID DISCHARGE HEAD, LIQUID DISCHARGE DEVICE, AND ACTUATOR
A liquid discharge head includes a diaphragm, a first electrode, a piezoelectric body, and a second electrode, which are stacked in this order in a first direction, in which when a region of the piezoelectric body interposed between the first electrode and the second electrode is set as a first region, a region of the piezoelectric body other than the first region is set as a second region, a portion of the piezoelectric body including at least a part of a boundary between the first region and the second region is set as a boundary portion, and a portion of the piezoelectric body that is different from the boundary portion and is located in the first region is set as a non-boundary portion, a dielectric constant of the boundary portion is smaller than a dielectric constant of the non-boundary portion.
Wafer structure
A wafer structure is disclosed and includes a chip substrate and at least one inkjet chip. The chip substrate is a silicon substrate which is fabricated by a semiconductor process on a wafer of at least 12 inches. The at least one inkjet chip is directly formed on the chip substrate by the semiconductor process, and the wafer is diced into the at least one inkjet chip, to be implemented for inkjet printing.
MICROFLUIDIC PASSAGE WITH PROTECTIVE LAYER
A microfluidic die may include a microfluidic passage and a protective layer provided adjacent to internal surfaces of the microfluidic passage. The protective layer may include a protective nano-crystalline material and a protective amorphous matrix encapsulating the protective nano-crystalline material.