A process includes providing a reactor containing a compound of the formula SiO.sub.x, wherein 0x2, and receiving, at the reactor, fluorinated gas. The process also includes obtaining a gaseous mixture formed at an elevated temperature in the reactor and removing silicon tetrafluoride from the gaseous mixture. An apparatus includes a reactor containing a compound of the formula SiO.sub.x, wherein 0x2, a component for receiving fluorinated gas at the reactor, a heating element for heating the compound of the formula SiO.sub.x and the fluorinated gas in the reactor, and a separation component for removing silicon tetrafluoride from a gaseous mixture formed in the reactor. A process of semiconductor manufacturing includes defluorinating exhaust gas using the process. A system for semiconductor manufacturing includes a set of components for carrying out the process.

A process for preparing a fluorinating reagent from a calcium-containing compound is disclosed. The process bypasses the requirement to form hydrofluoric acid. The fluorinating reagent can be used to prepare high-value fluorochemicals.

A process for preparing a fluorinating reagent from a calcium-containing compound is disclosed. The process bypasses the requirement to form hydrofluoric acid. The fluorinating reagent can be used to prepare high-value fluorochemicals.