The present description relates to metal alloy electrocatalysts, preferably composed of Ni and Co as transition metals and Se as a chalcogen. The electrocatalysts can take the form of nanochalcogenides that can be made using cryogenic milling followed by surfactant-assistant milling. The electrocatalysts can be used in the context of water electrolysis or electroreduction of CO.sub.2 gas into carbon based products.

A simple, scalable, inexpensive, and reproducible method of selectively preparing the M1 phase of a MoVNbTe mixed oxide in a hydrothermal synthesis using tellurium dioxide is disclosed which can utilize inexpensive metal oxides as starting compounds.

The present disclosure relates to a hydrogen evolution apparatus including an AC power source, a semiconductor electrode and a counter electrode connected to the AC power source, an electrolyte in which the semiconductor electrode is immersed, and a light source which irradiates light on the semiconductor electrode, in which the semiconductor electrode includes a conductive substrate and n-type semiconductor particles dispersed on a p-type semiconductor matrix or p-type semiconductor particles dispersed on an n-type semiconductor matrix which is vertically grown from the conductive substrate.

This present disclosure provides a core-shell quantum dot, a preparation method thereof, and a light-emitting device containing the same. The core of the core-shell quantum dot is CdSe.sub.XS.sub.(1-X), and the quantum dot shells include a first shell and a second shell, the first shell being selected from one or more of ZnSe, ZnSe.sub.YS.sub.(1-Y) and Cd.sub.(Z)Zn.sub.(1-Z)S, the second shell covering the first shell being one of Cd.sub.(Z)Zn.sub.(1-Z)S and ZnS, the maximum emission peak of the core-shell quantum dot is less than or equal to 480 nm, 0<X<1, 0<Y<1, 0<Z<1. The CdSe.sub.XS.sub.(1-X) core has a smaller bandgap and a shallower HOMO energy level, making hole injection easier.

An object of the present invention is to provide semiconductor nanoparticles having high quantum efficiency (QY) and a narrow full width at half maximum (FWHM). Semiconductor nanoparticles according to an embodiment of the present invention are semiconductor nanoparticles including at least, In, P, Zn and S, wherein the semiconductor nanoparticles include the components other than In in the following ranges: 0.50 to 0.95 for P, 0.30 to 1.00 for Zn, 0.10 to 0.50 for S, and 0 to 0.30 for halogen, in terms of molar ratio with respect to In.

Methods for dry plasma etching thin layers of material including Cu(In, Ga)Se, e.g., CIGS material on semiconductor substrates are provided. A method of etching a CIGS material layer such as copper indium gallium selenide film, includes: flowing an etching gas including a mixture of gases into a process chamber having a substrate disposed therein, the substrate including a copper indium gallium selenide layer having a patterned film stack disposed thereon, the patterned film stack covering a first portion of the copper indium gallium selenide layer and exposing a second portion of the copper indium gallium selenide layer; and contacting the copper indium gallium selenide layer with the etching gas to remove the second portion and form one or more copper indium gallium selenide edges of the first portion.

A continuous flow reactor for the efficient synthesis of nanoparticles with a high degree of crystallinity, uniform particle size, and homogenous stoichiometry throughout the crystal is described. Disclosed embodiments include a flow reactor with an energy source for rapid nucleation of the .[.procurors following.]. .Iadd.precursors to form nucleates followed .Iaddend.by a separate heating source for growing the nucleates. Segmented flow may be provided to facilitate mixing and uniform energy absorption of the precursors, and post production quality testing in communication with a control system allow automatic real-time adjustment of the production parameters. The nucleation energy source can be monomodal, multimodal, or multivariable frequency microwave energy and tuned to allow different precursors to nucleate at substantially the same time thereby resulting in a substantially homogenous nanoparticle. A shell application system may also be provided to allow one or more shell layers to be formed onto each nanoparticle.

The present invention relates to a compound containing at least germanium, tellurium, bismuth and copper as constituent elements, wherein the longest axis of ubiquitous bismuth crystals and copper crystals is less than 2.0 m.

A method for forming a crystalline material having an anisotropic, quasi-one-dimensional crystal structure is disclosed. In various embodiments, the method includes: mixing a plurality of precursor materials together to form a combined precursor material, the plurality of precursor materials including a transition-metal ion or a main group ion and at least one of an alkaline earth ion or an alkali metal ion; and reacting the combined precursor material to obtain the crystalline material, the crystalline material having a formula ABX3, wherein A is the at least one of the alkaline earth ion or the alkali metal ion and B is the transition-metal ion surrounded by six anions (X), and wherein the quasi-one-dimensional anisotropic crystal provides a birefringence of at least 0.03, defined as the absolute difference in the real part of the complex-refractive-index values along different crystal axes, in at least a portion of one or N both of the visible-wave spectrum or the infrared spectrum.

The present invention relates to a preparation method of a stretchable inorganic thermoelectric thin film and the stretchable inorganic thermoelectric thin film prepared by the method.