A process, a composition, and an article of manufacture are disclosed. The process includes generating a cyclic monoterpene derivative. The generating includes oxidizing a cyclic monoterpene to generate a ketone derivative and oxidizing the ketone derivative to form a lactone derivative. The composition and the article of manufacture include a polymer having monomer repeat units derived from a lactone derivative of a cyclic monoterpene.

Disclosed are a semiconductor comprising amorphous tellurium oxide, thin film transistor and method of fabricating same. In detail, a semiconductor comprising a chalcogen atom comprising at least one selected from the group consisting of a sulfur atom (S) and a selenium atom (Se); and tellurium composite comprising a tellurium (Te) atom and tellurium oxide. A thin film transistor (TFT) fabricated based on the TeO.sub.x channel layer according to the present disclosure exhibits excellent output/transfer characteristics and superior electrical performance with high hole field-effect mobility and a high on/off current ratio of 10.sup.7.

Inorganic semiconductors typically have limited p-type behavior due to the scarcity of holes and the localized valence band maximum, hindering the progress of complementary devices and circuits. In this work, we propose an inorganic blending strategy to activate the hole-transporting character in an inorganic semiconductor compound, namely tellurium-selenium-oxygen (TeSeO). By rationally combining intrinsic p-type semimetal, semiconductor, and wide-bandgap semiconductor into a single compound, the TeSeO system displays tunable bandgaps ranging from 0.7 to 2.2 eV. Wafer-scale ultrathin TeSeO films, which can be deposited at room temperature, display high hole field-effect mobility of 48.5 cm.sup.2/(Vs) and robust hole transport properties, facilitated by TeTe (Se) portions and OTeO portions, respectively.