The present invention disclosed use of lactam as a solvent in the preparation of nanomaterials by precipitation method, sol-gel method or high temperature pyrolysis. These methods are able to recycle lactam solvent, which meet requirements of environmental protection.

A methodology for synthesizing a nanoparticle batch, such as but not limited to a metal chalcogenide nanoparticle batch and further such as but not limited to a metal sulfide nanoparticle batch is predicated upon an expectation and observation that at elevated concentrations of at least one reactant material within a heat-up nanoparticle batch synthesis method, the resulting nucleated batch comprises nanoparticles that may be dimensionally focused to provide a substantially monodisperse nanoparticle batch. The embodied methodology is also applicable to a continuous reactor. The embodied methodology also considers viscosity as a dimensionally focusing result effective variable.

Provided is a semiconductor nanoparticle complex in which a ligand is coordinated to a surface of a semiconductor nanoparticle. The semiconductor nanoparticle includes In and P, the ligand includes a mercapto fatty acid ester represented by the following general formula, and the mercapto fatty acid ester has an SP value of 9.30 or less.

General formula: HS—R.sub.1—COOR.sub.2 (where R.sub.1 is a C.sub.1-11 hydrocarbon group and R.sub.2 is a C.sub.1-30 hydrocarbon group). The present invention can provide a semiconductor nanoparticle complex that keeps high fluorescence quantum yield before and after purification.

A method of preparing a core-shell structured quantum dot particle includes the steps of (a) preparing a core of quantum dot particle containing indium (In) and phosphorus (P) and (b) forming a shell by reacting the core of the quantum dot particles prepared in step (a), a zinc oxo cluster represented by Formula 1 below, and at least one anion precursor containing a group 16 element. Quantum dot particles prepared by the method; a population of the quantum dot particles; and a display device containing the population of the quantum dot particles are disclosed:

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A process for preparing alloy products is described using a self-sustaining or self-propagating SHS-type combustion process with point-source ignition, preferably a laser, in a pressurized vessel. Binary, ternary and quaternary alloys can be formed with control over polycrystalline structure and bandgap. Methods to tune the bandgap and the alloys formed are described. The alloy products may be doped. Preferably sulfides, tellurides or selenides are formed. Cooling during reaction takes place.

Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating, wherein the semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material, and an anisotropic nanocrystalline shell composed of a second, different, semiconductor material surrounding the anisotropic nanocrystalline core. The anisotropic nanocrystalline core and the anisotropic nanocrystalline shell form a quantum dot. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core.

A radical anion based functionalization of two-dimensional (2D) layered materials is proposed. The covalent functionalization of the basal plane of 2D materials with charge neutral radicals is typically unstable to reduction, leading to detachment of the functional groups from the basal plane upon reduction. This instability hinders the use of functionalized 2D materials as rechargeable electroactive species, unless the functional groups are bound to the edges of the 2D material. However, to achieve high capacity without the creation of many edges and defects, a stable functionalization of the basal plane in the reduced state is required. This goal can be achieved by radical anion functionalization, whereby the reduced/discharged state of the basal-plane-functionalized 2D material is produced. The product of the radical anion functionalization can be used as the discharged state of a cathode active material, solid electrolyte or part of a polymer composite.

The present disclosure describes radiation-assisted, substrate-free, and solution-based nanostructure (e.g., a nanotube and/or a nanowire (NW)) growth processes. The processes use the high absorption coefficient and high density of free charge carriers in particle seeds (e.g., nanoparticles, metal nanoparticles, and/or metal nanocrystals) to photothermally drive semiconductor nanostructure growth. The processes can be performed at atmospheric pressure, without specialized equipment such as specialized heating equipment and/or high-pressure reaction vessels.

A method is provided for producing an article which is transparent to near-wave IR, mid-wave and Long-wave multi-spectral and IR wavelength in the region of 0.4 pm to 16 μm. The method includes the steps of (a) Producing ultra-fine powder of CaLa.sub.2S.sub.4 via SPLTS process, (b) followed by pretreatment of the ultra-fine powder under inert and reducing gas conditions including H.sub.2 or Argon or N.sub.2 or H.sub.2/H.sub.2S, H.sub.2S, and mixtures there of (c) followed by sieving the powder in 140 mesh screen and cold pressing the powder at 7000 psi for 7 min. into a disk shaped green body (d) then Cold-Isostatic Pressing (CIP) at 40,000 psi for 5 min in a rubber mold (e) finally sintered article of CaLa.sub.2S.sub.4 disk of 25.4 mm diameter with ultra-high density containing cubic phase of CaLa.sub.2S.sub.4 to yield IR transmission of a peak value of 57% within the IR wavelength range of 2 μm to 16 μm, either by using microwave sintering followed by hot isostatic press or spark plasma sintering followed by hot isostatic press or vacuum sintering at (3×10.sup.−6 torr) followed by hot isostatic press or hot press sintering followed by hot isostatic press and finally followed by mirror polished IR article, is obtained.

The invention provides process for preparing tin or germanium monochalcogenides of cubic crystalline structure, the process comprises combining a source of tin or germanium and a source of chalcogenide in a reaction vessel in the presence of uncharged liquid primary amine R—NH.sub.2 and a charged form R—NH.sub.3+ associated with a counter anion, wherein R is saturated or unsaturated hydrocarbyl, which may be the same or different in the uncharged and charged forms, and recovering from the reaction mixture an essentially pure cubic phase of the monochalcogenides.