A quantum dot according to an embodiment includes a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium and a semiconductor nanocrystal shell on the core, the semiconductor nanocrystal shell including a zinc chalcogenide, wherein the quantum dot does not include cadmium, the zinc chalcogenide includes zinc and selenium, the quantum dot further includes gallium and a primary amine having 5 or more carbon atoms, and the quantum dot is configured to emit light having a maximum emission peak in a range of greater than about 450 nanometers (nm) and less than or equal to about 480 nm by excitation light. A method of producing the quantum dot and an electronic device including the same are also disclosed.

The present invention relates to a compound suitable as ligand for binding to the surface of a semiconductor nanoparticle, said compound comprising an anchor group, a linker group and an organic functional group; a semiconductor nanoparticle have said ligand attached to the outermost particle surface; a composition, a formulation and a process for the preparation of said semiconductor nanoparticle; and an electronic device.

Ligand-capped inorganic particles, films composed of the ligand-capped inorganic particles, and methods of patterning the films are provided. Also provided are electronic, photonic, and optoelectronic devices that incorporate the films. The ligands that are bound to the inorganic particles are composed of a cation/anion pair. The anion of the pair is bound to the surface of the particle and at least one of the anion and the cation is photosensitive.

Systems, methods, and devices are disclosed for producing quantum particles (e.g., quantum dots) having a uniform size by vaporization of molten precursor droplets. More particularly, the present technology produces quantum dots by melting or liquefying solid and substantially pure precursor materials followed by production of uniformly sized droplets of molten precursor by use of a droplet maker into a microwave generated plasma torch.

A phase-change material includes germanium Ge, tellurium Te and antimony Sb, including at least 37% germanium Ge, the ratio between the quantity of antimony Sb and the quantity of tellurium Te being between 1.5 and 4.

A functionalised nanoparticle that is at least in part coated by a polymer, wherein the polymer comprises charged and uncharged groups at a ratio ranging from 4:1 to 1:4 and the functionalised nanoparticle is conjugatable or can be functionalised to conjugate with a biomolecule.

A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent:
RCONHR  Chemical Formula 1 wherein each R is as defined herein; heating the organic ligand mixture in an inert atmosphere at a first temperature to obtain a heated organic ligand mixture; adding a zinc precursor, a selenium precursor, and optionally a tellurium precursor to the heated organic ligand mixture to obtain a reaction mixture, wherein the zinc precursor does not comprise oxygen; and heating the reaction mixture at a first reaction temperature to synthesize a first semiconductor nanocrystal particle.

The present disclosure provides quantum dots and methods of making the quantum dots comprising a substantially homogeneous population of monomeric nanocrystals, of a very small size, about 7 nm to about 12 nm in diameter. The method comprises mixing a nanocrystal coated with weakly binding ligands or ions with a polymer in a solution and incubating at a temperature greater than about 100° C., thereby forming a quantum dot having a substantially homogenous population of monomeric nanocrystals. The quantum dots can be further conjugated to bioaffinity molecules, enabling broad utilization of compact, biofunctional quantum dots for studying crowded macromolecular environments.

A quantum dot according to an embodiment includes a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium and a semiconductor nanocrystal shell on the core, the semiconductor nanocrystal shell including a zinc chalcogenide, wherein the quantum dot does not include cadmium, the zinc chalcogenide includes zinc and selenium, the quantum dot further includes gallium and a primary amine having 5 or more carbon atoms, and the quantum dot is configured to emit light having a maximum emission peak in a range of greater than about 450 nanometers (nm) and less than or equal to about 480 nm by excitation light. A method of producing the quantum dot and an electronic device including the same are also disclosed.

The present invention relates to a compound containing at least germanium, tellurium, bismuth, copper, antimony and silver as constituent elements.