A method for recycling copper indium gallium selenium materials comprises the steps of sulphating roasting, acid dissolution, extraction and electrolysis of metal copper, production of a gallium hydroxide deposition, replacement of indium, and the like. In the method, deselenization is carried by using sulphating roasting, and residues after roasting are oxidizing slags capable of being directly subjected to acid dissolution, thereby reducing acid gas pollution; in addition, copper is extracted by using a copper extractant, the separation effect is good and costs are low, the extracted copper can be directly electrolyzed, so as to obtain high-purity metal copper; and in another aspect, in the method, alkali separation of gallium is carried out, separation between indium and gallium can be implemented by merely adjusting the pH of a solution, thereby resolving the problem of co-extraction in the extraction of indium and gallium and the separation between indium and gallium, the separation effect is good, the purities of obtained indium and gallium products are high.

A method of producing mineral-rich algae by growing algae with an algae biofilm growing apparatus, wherein the algae is fed a mineral-rich feed stock. Furthermore, the mineral-rich algae is harvested and used as a foodstuff for human and animal consumption.

A method of producing mineral-rich algae by growing algae with an algae biofilm growing apparatus, wherein the algae is fed a mineral-rich feed stock. Furthermore, the mineral-rich algae is harvested and used as a foodstuff for human and animal consumption.

A method for recycling copper-indium-gallium-selenium (CIGS) waste is provided, comprising: vacuum distilling the CIGS waste to separate out selenium and obtain a distillation residue; electrolyzing the distillation residue to obtain copper and a remaining electrolyte containing indium and gallium; and separating indium and gallium from the remaining electrolyte containing indium and gallium. The method provides a novel route for recycling CIGS waste, the process is simple, and the environmental pollution caused by CIGS waste is decreased. Further, the residual raffinate can be reused in electrolyzing of the distillation residue as a copper sulfate electrolyte by adding appropriate amount of copper sulfate and sulfuric acid therein, such that the circulation of the copper sulfate electrolyte forms a closed cycle and the discharge of wastewater and pollution to the environment are reduced.

A method for recycling copper-indium-gallium-selenium (CIGS) waste is provided, comprising: vacuum distilling the CIGS waste to separate out selenium and obtain a distillation residue; electrolyzing the distillation residue to obtain copper and a remaining electrolyte containing indium and gallium; and separating indium and gallium from the remaining electrolyte containing indium and gallium. The method provides a novel route for recycling CIGS waste, the process is simple, and the environmental pollution caused by CIGS waste is decreased. Further, the residual raffinate can be reused in electrolyzing of the distillation residue as a copper sulfate electrolyte by adding appropriate amount of copper sulfate and sulfuric acid therein, such that the circulation of the copper sulfate electrolyte forms a closed cycle and the discharge of wastewater and pollution to the environment are reduced.

Provided is a method for catalytically reducing selenium. Hydrogen peroxide is used as a catalyst, and a reducer is added to a hexavalent-selenium-containing solution for reaction so as to reduce the selenium to elemental selenium, wherein the standard oxidation-reduction potential of the reducer is lower than the standard oxidation-reduction potential of the conversion of the hexavalent selenium to elemental selenium. The present method can further reduce a hexavalent-selenium element-containing selenic acid or selenate solution to an elemental selenium product in one step. In the present method, the hydrogen peroxide effectively lowers the descending speed of the reduction potential of the solution while having a catalytic effect, so that the reduction reaction process is carried out gently, thereby effectively preventing the selenium in the solution from overreducing to generate negatively bivalent selenium ions or compounds thereof, and solving problems such as a low recovery rate caused by selenium overreduction.

Provided is a method for catalytically reducing selenium. Hydrogen peroxide is used as a catalyst, and a reducer is added to a hexavalent-selenium-containing solution for reaction so as to reduce the selenium to elemental selenium, wherein the standard oxidation-reduction potential of the reducer is lower than the standard oxidation-reduction potential of the conversion of the hexavalent selenium to elemental selenium. The present method can further reduce a hexavalent-selenium element-containing selenic acid or selenate solution to an elemental selenium product in one step. In the present method, the hydrogen peroxide effectively lowers the descending speed of the reduction potential of the solution while having a catalytic effect, so that the reduction reaction process is carried out gently, thereby effectively preventing the selenium in the solution from overreducing to generate negatively bivalent selenium ions or compounds thereof, and solving problems such as a low recovery rate caused by selenium overreduction.

A chalcogen-containing compound that exhibits low thermal conductivity and excellent thermoelectric properties, and exhibits excellent phase stability even at relatively low temperature, a method for preparing the same, and a thermoelectric element including the same.

Materials, products, methods of use and fabrication thereof are disclosed. The materials are particularly well suited for application in products such as superconducting devices and quantum computing, due to ability to avoid undesirable effects from inherent noise and decoherence. The materials are formed from select isotopes having zero nuclear spin into a single crystal-phase film or layer of thickness depending on the desired application of the resulting device. The film/layer may be suspended or disposed on a substrate. The isotopes may be enriched from naturally-occurring sources of isotopically mixed elemental material(s). The single crystal is preferably essentially devoid of structural defects such as grain boundaries, inclusions, impurities and lattice vacancies.

Materials, products, methods of use and fabrication thereof are disclosed. The materials are particularly well suited for application in products such as superconducting devices and quantum computing, due to ability to avoid undesirable effects from inherent noise and decoherence. The materials are formed from select isotopes having zero nuclear spin into a single crystal-phase film or layer of thickness depending on the desired application of the resulting device. The film/layer may be suspended or disposed on a substrate. The isotopes may be enriched from naturally-occurring sources of isotopically mixed elemental material(s). The single crystal is preferably essentially devoid of structural defects such as grain boundaries, inclusions, impurities and lattice vacancies.