A vapor circulation regeneration system is provided for utilizing a vapor by circulation and regeneration. The system includes at least: a liquefaction regeneration unit including a liquefaction space where the vapor of an object to be heated is liquefied and a heating part for maintaining a liquid-like state; a vaporization unit for heating the liquid-like material by means of a heating part so as to generate a vapor; a fluid communication part for establishing fluid communication between the liquefaction regeneration unit and the vaporization unit; a processing unit for processing an object to be processed by using the vapor; a return pipe for returning the vapor used in the processing unit to the liquefaction regeneration unit; a liquefaction regeneration temperature control part for controlling the temperature of the liquefaction regeneration unit; and a vaporization temperature control part for controlling the temperature of the vaporization unit. Then, the object to be heated is present in a solid state at ordinary temperatures, present in a vapor state and the liquid-like state in the liquefaction regeneration unit, present in the liquid-like state in the fluid communication part, present in the liquid-like state and the vapor state in the vaporization unit, and present in the vapor state in the processing unit and the return pipe.

Processes for synthesizing substrate-free twinned 2D tellurium crystals with co-existing opposite chirality, and twinned 2D tellurium crystals produced thereby. The substrate-free twinned 2D tellurium crystals include a first wing and a second wing, the first wing and second wing have opposite chirality, and the first wing and the second wing are joined together at an angle to form a V-shaped crystal.

Processes for synthesizing substrate-free twinned 2D tellurium crystals with co-existing opposite chirality, and twinned 2D tellurium crystals produced thereby. The substrate-free twinned 2D tellurium crystals include a first wing and a second wing, the first wing and second wing have opposite chirality, and the first wing and the second wing are joined together at an angle to form a V-shaped crystal.

Disclosed is a method for removing impurity mercury from crude selenium. The method includes: mixing a vulcanizing agent with a crude selenium slag that is crushed to not more than 200 mesh uniformly, and performing briquetting to obtain a mixed material; adding the mixed material into a sealed furnace, and subjecting the mixed material to vulcanization by heating under an inert atmosphere to obtain a vulcanized selenium; subjecting the vulcanized selenium to primary vacuum distillation, such that selenium is converted into a gas phase and collected in a form of a volatile, and generated mercury sulfide and valuable elements are enriched in a resulting residue; and subjecting the selenium to secondary distillation to further remove mercury.

Disclosed is a method for removing impurity mercury from crude selenium. The method includes: mixing a vulcanizing agent with a crude selenium slag that is crushed to not more than 200 mesh uniformly, and performing briquetting to obtain a mixed material; adding the mixed material into a sealed furnace, and subjecting the mixed material to vulcanization by heating under an inert atmosphere to obtain a vulcanized selenium; subjecting the vulcanized selenium to primary vacuum distillation, such that selenium is converted into a gas phase and collected in a form of a volatile, and generated mercury sulfide and valuable elements are enriched in a resulting residue; and subjecting the selenium to secondary distillation to further remove mercury.

The present invention provides: a method for producing particles of an element having a standard electrode potential greater than 0V, characterized by using in a protic solvent solution a polysilane having a poor solubility in an aprotic solvent, to produce particles of the element from ions of at least one element having a standard electrode potential greater than 0V; and a composite body of polysilane and the particles of an element having a standard electrode potential greater than 0V, in which the particles of the at least one element having a standard electrode potential greater than 0V (provided that palladium is not included in the element, in the case where the polysilane is a dimethyl polysilane) are adsorbed in the polysilane having poor solubility in an aprotic solvent.

The present invention provides: a method for producing particles of an element having a standard electrode potential greater than 0V, characterized by using in a protic solvent solution a polysilane having a poor solubility in an aprotic solvent, to produce particles of the element from ions of at least one element having a standard electrode potential greater than 0V; and a composite body of polysilane and the particles of an element having a standard electrode potential greater than 0V, in which the particles of the at least one element having a standard electrode potential greater than 0V (provided that palladium is not included in the element, in the case where the polysilane is a dimethyl polysilane) are adsorbed in the polysilane having poor solubility in an aprotic solvent.

A method for forming tellurium/telluride nanowire arrays on a conductive substrate is provided. The method is used for forming tellurium/telluride nanowire thermoelectric materials and producing thermoelectric devices, and the method includes: preparing a conductive substrate; preparing a mixture solution comprising a tellurium precursor and a reducing agent; immersing the conductive substrate into the mixture solution; reacting the tellurium precursor and the reducing agent for forming a plurality of tellurium/telluride nanowires on the conductive substrate; and arranging the tellurium/telluride nanowires for forming tellurium/telluride nanowire arrays.

A method for forming tellurium/telluride nanowire arrays on a conductive substrate is provided. The method is used for forming tellurium/telluride nanowire thermoelectric materials and producing thermoelectric devices, and the method includes: preparing a conductive substrate; preparing a mixture solution comprising a tellurium precursor and a reducing agent; immersing the conductive substrate into the mixture solution; reacting the tellurium precursor and the reducing agent for forming a plurality of tellurium/telluride nanowires on the conductive substrate; and arranging the tellurium/telluride nanowires for forming tellurium/telluride nanowire arrays.

Articles including a solid porous material having a selenium nanomaterial bound to a surface of and within the solid porous material. The article may be a include no polymeric stabilizer or proteinaceous stabilizer. The solid porous material may be a sponge, a film, a fabric, a non-woven material, or a metal-organic framework (MOF), or a combination thereof. The article may be produced by treating a solid porous material with an aqueous selenous acid solution and heating the solid porous material to form the selenium nanomaterial on the surface of and within the solid porous material.