A thermoelectric conversion material includes: a base material that is a semiconductor composed of a base material element; a first additional element that is an element different from the base material element, has a vacant orbital in a d orbital or f orbital located internal to an outermost shell of the first additional element and forms a first additional level in a forbidden band of the base material; and a second additional element that is an element different from both of the base material element and the first additional element and forms a second additional level in the forbidden band of the base material. A difference is 1 between the number of electrons in an outermost shell of the second additional element and the number of electrons in at least one outermost shell of the base material element.

A thermoelectric conversion material includes: a base material that is a semiconductor composed of a base material element; a first additional element that is an element different from the base material element, has a vacant orbital in a d orbital or f orbital located internal to an outermost shell of the first additional element and forms a first additional level in a forbidden band of the base material; and a second additional element that is an element different from both of the base material element and the first additional element and forms a second additional level in the forbidden band of the base material. A difference is 1 between the number of electrons in an outermost shell of the second additional element and the number of electrons in at least one outermost shell of the base material element.

A coating liquid includes aluminum phosphate, a nonionic surfactant, and water and/or water-soluble solvent that dissolves or disperses the aluminum phosphate and the nonionic surfactant. An amount of the nonionic surfactant is preferably 1 vol % or more and 10 vol % or less. The nonionic surfactant is preferably at least one selected from the group consisting of ester, ether, alkylglycoside, octylphenol ethoxylate, pyrrolidone, and polyhydric alcohol. Applying such a coating liquid to a surface of a thermoelectric member, and drying and firing the coating liquid enables formation of a dense antioxidant film containing aluminum phosphate on the surface of the thermoelectric member.

The present disclosure provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise at least one population of nanostructures, at least one reactive diluent, at least one anaerobic stabilizer, and optionally at least one organic resin. The present disclosure also provides nanostructure films comprising a nanostructure layer and methods of making nanostructure films.

The present disclosure provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise at least one population of nanostructures, at least one reactive diluent, at least one anaerobic stabilizer, and optionally at least one organic resin. The present disclosure also provides nanostructure films comprising a nanostructure layer and methods of making nanostructure films.

A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.

A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.

A semiconductor nanocrystal can be made by an in situ redox reaction between an M donor and an E donor.

Method for preparing nanocrystals with a core-shell structure is provided. The method includes: providing quantum dot cores; and performing N growth processes of shell layers on a quantum dot core to form a nanocrystal with a core-shell structure. A shell source includes a shell source cation precursor and a shell source anion precursor, and the shell source cation precursor is a metal organic carboxylate. The N growth processes include one or more groups of M growth processes of adjacent shell layers, where N and M are positive integers, N2 and N/3MN1. Before and/or after performing each group of the M growth processes of adjacent shell layers, one of organic amine and organic carboxylic acid is mixed into a shell-layer-growth-reaction-system after a previous shell layer has formed, to form a mixed system to heat. A subsequent shell layer is grown over the previous shell layer.

Method for preparing nanocrystals with a core-shell structure is provided. The method includes: providing quantum dot cores; and performing N growth processes of shell layers on a quantum dot core to form a nanocrystal with a core-shell structure. A shell source includes a shell source cation precursor and a shell source anion precursor, and the shell source cation precursor is a metal organic carboxylate. The N growth processes include one or more groups of M growth processes of adjacent shell layers, where N and M are positive integers, N2 and N/3MN1. Before and/or after performing each group of the M growth processes of adjacent shell layers, one of organic amine and organic carboxylic acid is mixed into a shell-layer-growth-reaction-system after a previous shell layer has formed, to form a mixed system to heat. A subsequent shell layer is grown over the previous shell layer.