A composite with high energy storage capacity for use in energy storage devices includes graphene and mesoporous graphitic carbon nitride (mc@g-C.sub.3N.sub.4). The graphitic carbon nitride is coated on mesoporous carbon (mc@g-C3N4) at a concentration ranging from 3% to 33%. The graphitic carbon nitride is obtained from condensation of mesoporous carbon and urea or a precursor thereof. Electrodes may be prepared from the composite. High energy high power storage devices such as the Electric Double Layer Capacitor (EDLC) may be fabricated with these electrodes.

The present invention relates to a method for producing a metal nitride by igniting a raw material powder containing a metal powder filled in a reaction vessel under a nitrogen atmosphere and propagating nitriding combustion heat generated by a nitriding reaction of the metal to the whole raw material powder, the method including forming a heat insulating layer made of a material having nitrogen permeability and inert to the nitriding reaction on an upper surface of a layer made of the raw material powder. According to the present invention, it is possible to provide a method for reducing the amount of unreacted metal powder when producing a metal nitride by a combustion synthesis method.

MXene fibers and a preparation method thereof are provided. The method for preparation of a MXene fiber comprises preparing a dope solution in which MXene sheets are dispersed in a polar solvent, extruding the dope solution into a coagulating solution to coagulate the extruded dope solution to change into a MXene gel fiber, and drying the MXene gel fiber and converting it into the MXene fiber.

Soft magnetic materials, and related techniques for manufacturing such soft magnetic materials, are disclosed herein. Such magnetic materials can be based on iron nitride, iron oxynitride, iron boronitride and/or iron carbonitiride. The techniques disclosed herein for manufacturing ferromagnetic particles can be used to control functional magnetic and electrical properties of the manufactured particles. Some techniques disclosed herein can be used to form a coating on a particle, with the coating having a thickness of 0.05 to 1.00 μm. These magnetic materials manufactured via one or more of the techniques disclosed herein can have both relatively high magnetic induction and relatively high electrical resistivity.

The present invention belongs to the technical field of inorganic luminescent materials, particularly relates to a nitride fluorescent material, and further discloses a light-emitting device containing such a fluorescent material. The nitride fluorescent material contains a compound with a structure like M.sub.mAl.sub.xSi.sub.yN.sub.3: aR, bEu, cCe. The fluorescent material has very high physical stability and chemical stability, and the fluorescent material is better in crystallization, and thus has relatively high external quantum efficiency. When being applied to a light-emitting device, the fluorescent material can fully exert the advantages of good stability and high external quantum efficiency, and the light-emitting efficiency and stability of the light-emitting device can be further improved.

A cutting tool includes: a substrate; a hard layer provided on the substrate; and a titanium carbonitride layer provided on the hard layer, wherein a thickness of the titanium carbonitride layer is more than or equal to 2 μm, a hardness of the titanium carbonitride layer at a room temperature is more than or equal to 35 GPa, and a Young's modulus of the titanium carbonitride layer at the room temperature is less than or equal to 650 GPa.

Techniques are disclosed for milling an iron-containing raw material in the presence of a nitrogen source to generate anisotropically shaped particles that include iron nitride and have an aspect ratio of at least 1.4. Techniques for nitridizing an anisotropic particle including iron, and annealing an anisotropic particle including iron nitride to form at least one α″-Fe.sub.16N.sub.2 phase domain within the anisotropic particle including iron nitride also are disclosed. In addition, techniques for aligning and joining anisotropic particles to form a bulk material including iron nitride, such as a bulk permanent magnet including at least one α″-Fe.sub.16N.sub.2 phase domain, are described. Milling apparatuses utilizing elongated bars, an electric field, and a magnetic field also are disclosed.

This disclosure provides a vapor-liquid reaction device including a vapor-liquid reaction chamber and a projecting member. The vapor-liquid reaction chamber holds a molten metal in a lower portion of an internal space of the vapor-liquid reaction chamber.

This disclosure provides a vapor-liquid reaction device including a vapor-liquid reaction chamber and a projecting member. The vapor-liquid reaction chamber holds a molten metal in a lower portion of an internal space of the vapor-liquid reaction chamber.

A method of making nanoparticles including a semiconducting nitride is provided. The method includes reacting precursors in a gas phase to form the nanoparticles including the semiconducting nitride. The precursors include at least one of a gallium (Ga) precursor or an indium (In) precursor and a nitrogen (N) precursor. The semiconducting nitride is In.sub.1−xGa.sub.xN, where 0≤x≤1. Structures that include the nanoparticles and systems for making the nanoparticles are also provided.