Patent classifications
C01B21/06
Substituted Cyanophosphine Additives for Lithium Conducting Carbon Phosphonitrides
Cyanophosphines other than P(CN).sub.3 react with lithium dicyanamide to produce lithiated carbon phosphonitrides with mobile Li.sup.+ ions.
NIOBIUM-CONTAINING FILM FORMING COMPOSITIONS AND VAPOR DEPOSITION OF NIOBIUM-CONTAINING FILMS
Disclosed are Niobium-containing film forming compositions, methods of synthesizing the same, and methods of forming Niobium-containing films on one or more substrates via atomic layer deposition processes using the Niobium-containing film forming compositions.
High pressure reactor and method of growing group III nitride crystals in supercritical ammonia
Provided is a high-pressure reactor suitable for a high-pressure process using supercritical ammonia grow bulk crystal of group III nitride having lateral dimension larger than 2 inches or to form various transition metal nitrides. The reactor has nutrient distributed along the reactor's longitudinal axis and seed material positioned at the reactor's inner wall and along the reactor's longitudinal axis. Nutrient diffuses through supercritical ammonia from the reactor's longitudinal axis and deposits on the seed material positioned by the reactor's inner wall. Both the nutrient and seed material are heated by the same heater. Material growth can primarily be due to material diffusion through supercritical ammonia. This configuration and methodology reduce convective movement of supercritical ammonia due to temperature differential, providing a more quiescent environment in which group III nitride or transition metal nitride is formed.
NOVEL GRAPHENE-LIKE Si2BN MATERIAL AND METHOD OF MAKING THEREOF
This application relates to monolayers of Si.sub.2BN or C.sub.2BN, arranged in a graphiticized hexagonal arrangement. Each Si/C atom has a Si/C, B, and N nearest neighbor, while each B (N) has two Si/C's and one N (B) as nearest neighbors. The monolayer can be a 2D composition or can be “rolled” into a nanotubular 3D arm-chair or zig-zag configuration.
Method for extending the campaign life of stabilizers for a coating line
A steel processing line includes a dip tub and a stab roll. The dip tub is filled with a quantity of molten metal. At least a portion of the stab roll is submerged in the quantity of molten metal. The stab roll includes two journals. Each journal is received by an opening defined by a roller sleeve including a ceramic or refractory material. The roller sleeve is disposed between each journal and a bearing block. An inner dimension of each roller sleeve and an outer dimension of each respective journal defines a clearance. The inner dimension of each roller sleeve and the outer dimension of each respective journal is configured such that the clearance persists as the stab roll and the pair of roller sleeves are heated by the molten metal. Alternatively, inserts are fastened to an outer surface of each journal in lieu of the roller sleeves.
TWO-DIMENSIONAL CARBON NITRIDE MATERIAL AND METHOD OF PREPARATION
Graphitic carbon nitride has been prepared and its structure confirmed by extensive characterization. This material has useful electronic, in particular semiconducting, properties. Crystalline thin films have been prepared. Synthesis may be carried out by condensation of unsaturated carbon- and nitrogen-containing compound(s) in inert solvent such as a salt melt, forming graphitic carbon nitride at a gas-liquid or solid-liquid interface.
Phosphor and light-emitting equipment using phosphor
Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.
METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL
A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 μm, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm.sup.3 for the intended crystal growth.
Method of producing triazine-based graphitic carbon nitride films
Methods for fabricating triazene-based graphitic carbon nitride films are provided. A substrate can be coated with silk fibroin, submerged in the central zone of plasma, and provided with microwave power. The substrate can then be dried to give a triazene-based graphitic carbon nitride film. Methods of the subject invention can be easily scaled up to industrial levels and produce triazene-based graphitic carbon nitride films that show excellent electrical properties as anodes in lithium-ion batteries.
Antennas comprising MX-ene films and composites
The present disclosure is directed to antennas for transmitting and/or receiving electrical signals comprising a MXene composition, devices comprising these antennas, and methods of transmitting and receiving signals using these antennas.