Provided is a nitride semiconductor light emitting element which has good luminous efficiency by suppressing deep-level emission and increasing the monochromaticity. A nitride semiconductor light emitting element according to the present invention comprises an active layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer. The n-type nitride semiconductor layer contains Al.sub.X1In.sub.X2Ga.sub.X3N (wherein 0<X1≦1, 0≦X2<1, 0≦X3<1, X1+X2+X3=1), and both the concentration of C contained therein and the concentration of O contained therein are less than or equal to 1×10.sup.17/cm.sup.3.

A method for producing a transparent electrode for oxygen production having a Ta nitride layer on a transparent substrate, including: a step of forming a Ta nitride precursor layer on the transparent substrate; and a step of nitriding the Ta nitride precursor layer with a mixed gas containing ammonia and a carrier gas.

The present invention relates to a method for producing monocrystalline gallium containing nitride from a source material containing gallium in the environment of supercritical ammonia solvent with the addition of a mineralizer containing the element of Group I (IUPAC, 1989), wherein in an autoclave two temperature zones are generated, i.e. a dissolution zone with lower temperature containing the source material, and a crystallization zone located below it with higher temperature, containing at least one seed. At least two further components are introduced into the process environment, namely an oxygen getter in molar ratio to ammonia ranging from 0.0001 to 0.2, and an acceptor dopant in molar ratio to ammonia not higher than 0.1, said acceptor dopant being manganese, iron, vanadium or carbon, or a combination thereof. The invention also relates to a monocrystalline gallium containing nitride prepared by this method.

The present disclosure is directed to compositions comprising at least one layer having first and second surfaces, each layer comprising: a substantially two-dimensional array of crystal cells, each crystal cell having an empirical formula of M′.sub.2M″nX.sub.n+1, such that each X is positioned within an octahedral array of M′ and M″; wherein M′ and M″ each comprise different Group 11113, WE, VB, or VIB metals; each X is C, N, or a combination thereof; n=1 or 2; and wherein the M′ atoms are substantially present as two-dimensional outer arrays of atoms within the two-dimensional array of crystal cells; the M″ atoms are substantially present as two-dimensional inner arrays of atoms within the two-dimensional array of crystal cells; and the two dimensional inner arrays of M″ atoms are sandwiched between the two-dimensional outer arrays of M′ atoms within the two-dimensional army of crystal cells.

This disclosure is directed to composites comprising a polymeric film coated on one or both sides with a MXene material, as well as lithium metal electrodes and components thereof, including MXene-polymer composite separators.

Provided are methods of stabilizing MXene compositions using polyanionic salts so as to reduce the oxidation of the MXenes. Also provided are stabilized MXene compositions.

A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a germanium element, the concentration of the N-type dopant is 1×10.sup.19 cm.sup.−3 or more, and the concentration of the germanium element is nine times or more higher than the concentration of the N-type dopant.

Provided is a three-phase system V.sub.2O.sub.3/VN/Mo.sub.2C nanoelectrode material, and a preparation method and application thereof. The nanoelectrode material comprises V.sub.2O.sub.3 particles, VN particles, and Mo.sub.2C particles. The V.sub.2O.sub.3 particles, VN particles, and Mo.sub.2C particles are interlaced in lattice stripes and are uniformly distributed. The mass ratio of the V.sub.2O.sub.3, VN and Mo.sub.2C is (1 to 4):(10 to 40):(4 to 16). The above-mentioned three kinds of nanoparticles are intertwined to form more incoherent interface area. The increase in the area of the incoherent interface area will cause more defects, so that more active sites are provided, and the hydrogen production performance is improved.

An object of the present invention is to improve quality of a nitride crystal, and also improve performance and manufacturing yield of a semiconductor device manufactured using the crystal. Provided is a nitride crystal in which a composition formula is represented by In.sub.xAl.sub.yGa.sub.1-x-yN (satisfying 0≤x≤1, 0≤y≤1, 0≤x+y≤1), and the concentration of B in the crystal is less than 1×10.sup.15 at/cm.sup.3, and each of the concentrations of O and C in the crystal is less than 1×10.sup.15 at/cm.sup.3 in a region of 60% or more of a main surface.

A sputtering target for a gallium nitride thin film, which has a low oxygen content, a high density and a low resistivity. A gallium nitride powder having powder physical properties of a low oxygen content and a high bulk density is used and hot pressing is conducted at high temperature in high vacuum to prepare a gallium nitride sintered body having a low oxygen content, a high density and a low resistivity.