Disclosed are a honeycomb-like homo-type heterojunction carbon nitride composite material and a preparation method thereof, and an application of the honeycomb-like homo-type heterojunction carbon nitride composite material in catalytic treatment of waste gas. The preparation method includes the following steps: with two different carbon nitride precursors namely urea and thiourea as raw materials, weighing certain amounts of the urea and the thiourea, adding the urea and the thiourea into a crucible, adding a certain amount of ultrapure water, placing the crucible in a muffle furnace, and carrying out calcination molding. The honeycomb-like homo-type heterojunction carbon nitride prepared by the one-step method has good photocatalytic effect to catalytic degradation of NO; meanwhile, the honeycomb-like homo-type heterojunction carbon nitride composite material has the advantages of rich and easily-available production raw materials, good stability, reusability, etc., and has application prospects in the field of treatment of NO in the air.

A composition comprising a graphitic carbon nitride material and a conductive carbon material coating may be used in electrodes or in batteries such as sodium ion batteries. The composition may be prepared using a method comprising the steps of providing a nitrogenous compound; adding a carbonaceous material to the nitrogenous compound to form a slurry; drying the slurry to form a coated mixture; and carbonizing the coated mixture.

Herein, provided are new classes of nitrogen enriched graphitic-like carbon-based materials porous nanosheets doped atomically with one or more metal atoms and/or non-metal traces, for example, binary Pt and Cu denoted as (Pt—Cu-gCN-Ns), and methods of making and using the materials, for example, in capacitive seawater desalination under ambient reaction conditions and parameters.

The present invention relates to a method of manufacturing gallium nitride quantum dots, and more particularly, to a method of manufacturing gallium nitride quantum dots doped with metal ions, which uses a wet-based synthesis method capable of lowering the fluorescence energy of pure gallium nitride by introducing metal ions into pure gallium nitride.

The present invention relates to a method of manufacturing gallium nitride quantum dots, and more particularly, to a method of manufacturing gallium nitride quantum dots doped with metal ions, which uses a wet-based synthesis method capable of lowering the fluorescence energy of pure gallium nitride by introducing metal ions into pure gallium nitride.

Cyanophosphines other than P(CN).sub.3 react with lithium dicyanamide to produce lithiated carbon phosphonitrides with mobile Li.sup.+ ions.

A surface treatment layer for a titanium-containing substrate includes a disordered metal oxide lattice having metal nitride compounds doped in the disordered metal oxide lattice. A method of surface treating a metal substrate includes introducing oxygen to a titanium-containing substrate to thereby form an oxide layer within the titanium-containing substrate, and, after the step of introducing oxygen, introducing nitrogen to the titanium-containing substrate to thereby modify the oxide layer to form a surface treatment layer.

There is provided a coral-like composite material comprising highly dispersed conductive metal nitride, metal carbide or metal carbonitride nanoparticles on mesoporous carbon nanosheets, and a method of preparing the same. There is also provided a coating material for a modified separator of a lithium-sulfur battery comprising the coral-like composite material as described herein, a conducting carbon material and a binder, and a method of preparing the same.

There is provided a coral-like composite material comprising highly dispersed conductive metal nitride, metal carbide or metal carbonitride nanoparticles on mesoporous carbon nanosheets, and a method of preparing the same. There is also provided a coating material for a modified separator of a lithium-sulfur battery comprising the coral-like composite material as described herein, a conducting carbon material and a binder, and a method of preparing the same.

A molybdenum compound and a method of manufacturing an integrated circuit device, the molybdenum compound being represented by the following General Formula (I): ##STR00001##