A phosphorus production method can include reducing feed containing phosphate ore and providing a silica ratio from 0.3 to 0.7 in a reaction chamber from 1250 to 1380 C. Less than 20% of the phosphate remains in the residue. Another phosphorus production method includes continuously moving a reducing bed through the reaction chamber with the feed agglomerates substantially stable while in the reducing bed. Reaction chamber temperature can be from 1250 to 1380 C. A phosphorus production system includes a barrier wall segmenting the reaction chamber into a reduction zone differentiated from a preheat zone. The bed floor is configured to move continuously from the preheat zone to the reduction zone during operation. A method for producing a reduction product includes exothermically oxidizing reduction/oxidation products in the reaction chamber, thereby adding heat to the reducing bed from the freeboard as a second heat source.

A phosphorus production method can include reducing feed containing phosphate ore and providing a silica ratio from 0.3 to 0.7 in a reaction chamber from 1250 to 1380 C. Less than 20% of the phosphate remains in the residue. Another phosphorus production method includes continuously moving a reducing bed through the reaction chamber with the feed agglomerates substantially stable while in the reducing bed. Reaction chamber temperature can be from 1250 to 1380 C. A phosphorus production system includes a barrier wall segmenting the reaction chamber into a reduction zone differentiated from a preheat zone. The bed floor is configured to move continuously from the preheat zone to the reduction zone during operation. A method for producing a reduction product includes exothermically oxidizing reduction/oxidation products in the reaction chamber, thereby adding heat to the reducing bed from the freeboard as a second heat source.

A phosphorus production method can include reducing feed containing phosphate ore and providing a silica ratio from 0.3 to 0.7 in a reaction chamber from 1250 to 1380 C. Less than 20% of the phosphate remains in the residue. Another phosphorus production method includes continuously moving a reducing bed through the reaction chamber with the feed agglomerates substantially stable while in the reducing bed. Reaction chamber temperature can be from 1250 to 1380 C. A phosphorus production system includes a barrier wall segmenting the reaction chamber into a reduction zone differentiated from a preheat zone. The bed floor is configured to move continuously from the preheat zone to the reduction zone during operation. A method for producing a reduction product includes exothermically oxidizing reduction/oxidation products in the reaction chamber, thereby adding heat to the reducing bed from the freeboard as a second heat source.

A phosphorus production method can include reducing feed containing phosphate ore and providing a silica ratio from 0.3 to 0.7 in a reaction chamber from 1250 to 1380 C. Less than 20% of the phosphate remains in the residue. Another phosphorus production method includes continuously moving a reducing bed through the reaction chamber with the feed agglomerates substantially stable while in the reducing bed. Reaction chamber temperature can be from 1250 to 1380 C. A phosphorus production system includes a barrier wall segmenting the reaction chamber into a reduction zone differentiated from a preheat zone. The bed floor is configured to move continuously from the preheat zone to the reduction zone during operation. A method for producing a reduction product includes exothermically oxidizing reduction/oxidation products in the reaction chamber, thereby adding heat to the reducing bed from the freeboard as a second heat source.

A low pressure process for producing thin film crystalline black phosphorus on a substrate and a black phosphorus thin film made by the process. The process includes flowing a phosphorus-containing gas into a deposition chamber and depositing phosphorus from the phosphorus-containing gas onto the substrate in the chamber. The substrate is selected from (i) a gold substrate, a gold-tin alloy substrate, a silver substrate and a copper substrate and (ii) a substrate comprising a thin film of metal selected from gold, tin, silver, copper and alloys of the foregoing metals. The substrate and phosphorus are heated to a temperature ranging from about 350 to less than about 500 C. to form a phosphorus intermediate composition. The substrate and intermediate composition are heated to a temperature of greater than 500 C. to less than about 1000 C. convert the metal phosphorus intermediate composition to the black phosphorus thin film.

A low pressure process for producing thin film crystalline black phosphorus on a substrate and a black phosphorus thin film made by the process. The process includes flowing a phosphorus-containing gas into a deposition chamber and depositing phosphorus from the phosphorus-containing gas onto the substrate in the chamber. The substrate is selected from (i) a gold substrate, a gold-tin alloy substrate, a silver substrate and a copper substrate and (ii) a substrate comprising a thin film of metal selected from gold, tin, silver, copper and alloys of the foregoing metals. The substrate and phosphorus are heated to a temperature ranging from about 350 to less than about 500 C. to form a phosphorus intermediate composition. The substrate and intermediate composition are heated to a temperature of greater than 500 C. to less than about 1000 C. convert the metal phosphorus intermediate composition to the black phosphorus thin film.

A composition includes a few-layer phosphorene nanomaterial comprising at least one of mono-, bi-, and n-layer phosphorene nanosheets, where n is an integer selected from 3 to 6; deoxygenated water; and at least one amphiphilic surface active component.

A composition includes a few-layer phosphorene nanomaterial comprising at least one of mono-, bi-, and n-layer phosphorene nanosheets, where n is an integer selected from 3 to 6; deoxygenated water; and at least one amphiphilic surface active component.

Producing nanostructure materials in a thin film reactor (TFR) from starting material of inorganic or organic material of layered or two dimensional (2D) structure or inorganic material transformed in situ into 2D inorganic material, or single walled carbon nanotubes (SWCNTs), and a solvent or liquid phase. The TFR can be a vortex fluidic device (VFD) or a device with spaced first and second fluid contact surfaces, which can be conical, for relative rotation to generate shear stress in the thin film therebetween. A liquid supply means delivers a liquid between the first and second fluid contact surfaces. The composition can be exposed to laser energy. The thin film reactor can form graphene, graphene oxide, scrolls, tubes, spheres or rings of the layered or 2D material.

A low pressure process for producing thin film crystalline black phosphorus on a substrate and a black phosphorus thin film made by the process. The process includes flowing a phosphorus-containing gas into a deposition chamber and depositing phosphorus from the phosphorus-containing gas onto the substrate in the chamber. The substrate is selected from (i) a gold substrate, a gold-tin alloy substrate, a silver substrate and a copper substrate and (ii) a substrate comprising a thin film of metal selected from gold, tin, silver, copper and alloys of the foregoing metals. The substrate and phosphorus are heated to a temperature ranging from about 350 to less than about 500 C. to form a phosphorus intermediate composition. The substrate and intermediate composition are heated to a temperature of greater than 500 C. to less than about 1000 C. convert the metal phosphorus intermediate composition to the black phosphorus thin film.