A method of producing black phosphorus which includes the steps of: weighing and mixing reaction raw materials which comprises metallic tin, red phosphorus and monocrystalline iodine, wherein a weight ratio of tin: red phosphorus: iodine is 0.6-3.5: 5-45: 0.1-0.8; feeding the mixture to a high-temperature resistant metal reaction tube; removing air by introducing inert gas and sealing the reaction tube tightly; placing the metal reaction tube inside a muffle furnace for carrying out calcination reaction by first increasing a temperature at a preset rate to a maximum temperature and keeping warm and then decreasing a temperature at a preset rate and keeping warm, then to room temperature so that the black phosphorus is produced. The conversion rate is very high and the quality of the produced product is classified as high quality.

A phosphorus production method can include reducing feed containing phosphate ore and providing a silica ratio from 0.3 to 0.7 in a reaction chamber from 1250 to 1380 C. Less than 20% of the phosphate remains in the residue. Another phosphorus production method includes continuously moving a reducing bed through the reaction chamber with the feed agglomerates substantially stable while in the reducing bed. Reaction chamber temperature can be from 1250 to 1380 C. A phosphorus production system includes a barrier wall segmenting the reaction chamber into a reduction zone differentiated from a preheat zone. The bed floor is configured to move continuously from the preheat zone to the reduction zone during operation. A method for producing a reduction product includes exothermically oxidizing reduction/oxidation products in the reaction chamber, thereby adding heat to the reducing bed from the freeboard as a second heat source.

A phosphorus production method can include reducing feed containing phosphate ore and providing a silica ratio from 0.3 to 0.7 in a reaction chamber from 1250 to 1380 C. Less than 20% of the phosphate remains in the residue. Another phosphorus production method includes continuously moving a reducing bed through the reaction chamber with the feed agglomerates substantially stable while in the reducing bed. Reaction chamber temperature can be from 1250 to 1380 C. A phosphorus production system includes a barrier wall segmenting the reaction chamber into a reduction zone differentiated from a preheat zone. The bed floor is configured to move continuously from the preheat zone to the reduction zone during operation. A method for producing a reduction product includes exothermically oxidizing reduction/oxidation products in the reaction chamber, thereby adding heat to the reducing bed from the freeboard as a second heat source.

Provided are a lateral p-n junction black phosphorus thin film, and a method of manufacturing the same, and specifically, a lateral p-n junction black phosphorus thin film in which a p-type black phosphorus thin film having a p-type semiconductor property and a n-type black phosphorus thin film having a n-type semiconductor property form a lateral junction by modifying some regions on a surface of the black phosphorus thin film through light irradiation with a compound having a specific chemical structure, and a method of manufacturing the same.

Provided are a lateral p-n junction black phosphorus thin film, and a method of manufacturing the same, and specifically, a lateral p-n junction black phosphorus thin film in which a p-type black phosphorus thin film having a p-type semiconductor property and a n-type black phosphorus thin film having a n-type semiconductor property form a lateral junction by modifying some regions on a surface of the black phosphorus thin film through light irradiation with a compound having a specific chemical structure, and a method of manufacturing the same.

Methods for the preparation of few-layer phosphorene, compositions thereof and related devices fabricated therefrom.

Methods for the preparation of few-layer phosphorene, compositions thereof and related devices fabricated therefrom.

The present disclosure relates to a black phosphorus anode electrode, including a current collector, an induction deposition layer, and a film of black phosphorus. The induction deposition layer is disposed on the current collector. The induction deposition layer includes a phosphorus-containing alloy configured to induce deposition of the film of black phosphorus. The film of black phosphorus is formed on the induction deposition layer by magnetron sputtering. The film of black phosphorus covers the current collector.

The present disclosure relates to a black phosphorus anode electrode, including a current collector, an induction deposition layer, and a film of black phosphorus. The induction deposition layer is disposed on the current collector. The induction deposition layer includes a phosphorus-containing alloy configured to induce deposition of the film of black phosphorus. The film of black phosphorus is formed on the induction deposition layer by magnetron sputtering. The film of black phosphorus covers the current collector.

The present disclosure provides black phosphorous devices with use in, e.g., inter alia, molecular analysis applications. A device may comprise a region of black phosphorous with, e.g., 1 to 10 layers and having a pore formed through the layer or layers. The black phosphorous may be supported by a support membrane. Also provided are related methods of molecular analysis and methods of fabricating the devices.