The present disclosure provides black phosphorous devices with use in, e.g., inter alia, molecular analysis applications. A device may comprise a region of black phosphorous with, e.g., 1 to 10 layers and having a pore formed through the layer or layers. The black phosphorous may be supported by a support membrane. Also provided are related methods of molecular analysis and methods of fabricating the devices.

A black phosphorus crystal having a high photoelectric response rate, a two-dimensional black phosphorus PN junction, and preparation method and use thereof. The black phosphorus crystal having a high photoelectric response rate is a single crystal with a spatial point group Cmca (No. 64), cell parameters a=3.2-3.4 ?, b=10.4-10.6 ?, c=4.3-4.5 ?, and an interlayer spacing of 4-6 ?, and is characterized by a high photoelectric response rate, an adjustable semiconductor type, and the like. Its preparation method is simple with a mild condition, a high yield, a low cost, and less pollution. The two-dimensional black phosphorus PN junction comprises a two-dimensional black phosphorus film, a first area of the film forming an n-type semiconductor by n-type doping, a second area of the film is maintained as a p-type semiconductor, and the first area is adjacent to the second area, to enable the n-type semiconductor to be combined with the p-type semiconductor to form the PN junction. The two-dimensional black phosphorus PN junction has properties, such as a unidirectional conductivity, or a special photovoltaic effect. The preparation method is simple, and efficient with a good repeatability, and is compatible with a conventional semiconductor technology. The black phosphorus crystal and the two-dimensional black phosphorus PN junction according to the disclosure have extensive application prospects in photoelectric and electronic fields.

A black phosphorus crystal having a high photoelectric response rate, a two-dimensional black phosphorus PN junction, and preparation method and use thereof. The black phosphorus crystal having a high photoelectric response rate is a single crystal with a spatial point group Cmca (No. 64), cell parameters a=3.2-3.4 ?, b=10.4-10.6 ?, c=4.3-4.5 ?, and an interlayer spacing of 4-6 ?, and is characterized by a high photoelectric response rate, an adjustable semiconductor type, and the like. Its preparation method is simple with a mild condition, a high yield, a low cost, and less pollution. The two-dimensional black phosphorus PN junction comprises a two-dimensional black phosphorus film, a first area of the film forming an n-type semiconductor by n-type doping, a second area of the film is maintained as a p-type semiconductor, and the first area is adjacent to the second area, to enable the n-type semiconductor to be combined with the p-type semiconductor to form the PN junction. The two-dimensional black phosphorus PN junction has properties, such as a unidirectional conductivity, or a special photovoltaic effect. The preparation method is simple, and efficient with a good repeatability, and is compatible with a conventional semiconductor technology. The black phosphorus crystal and the two-dimensional black phosphorus PN junction according to the disclosure have extensive application prospects in photoelectric and electronic fields.

A method for preparing a metal-free few-layer phosphorous nanomaterial. The method comprises an ice-assisted exfoliation process (or solvent ice-assisted exfoliation process). The method allows for the preparation of a few-layer phosphorous nanomaterial with improved yield and reduced duration and exfoliation power. The few-layer phosphorous nanomaterial is used in the preparation of a photocatalyst. The photocatalyst exhibits a long-term stability, high photocatalytic H.sub.2 evolution efficiency from water, and good stability under visible light irradiation.

A method for preparing a metal-free few-layer phosphorous nanomaterial. The method comprises an ice-assisted exfoliation process (or solvent ice-assisted exfoliation process). The method allows for the preparation of a few-layer phosphorous nanomaterial with improved yield and reduced duration and exfoliation power. The few-layer phosphorous nanomaterial is used in the preparation of a photocatalyst. The photocatalyst exhibits a long-term stability, high photocatalytic H.sub.2 evolution efficiency from water, and good stability under visible light irradiation.

Provided are a lateral p-n junction black phosphorus thin film, and a method of manufacturing the same, and specifically, a lateral p-n junction black phosphorus thin film in which a p-type black phosphorus thin film having a p-type semiconductor property and a n-type black phosphorus thin film having a n-type semiconductor property form a lateral junction by modifying some regions on a surface of the black phosphorus thin film through light irradiation with a compound having a specific chemical structure, and a method of manufacturing the same.

A method for preparing a metal-free few-layer phosphorous nanomaterial. The method comprises an ice-assisted exfoliation process (or solvent ice-assisted exfoliation process). The method allows for the preparation of a few-layer phosphorous nanomaterial with improved yield and reduced duration and exfoliation power. The few-layer phosphorous nanomaterial is used in the preparation of a photocatalyst. The photocatalyst exhibits a long-term stability, high photocatalytic H.sub.2 evolution efficiency from water, and good stability under visible light irradiation.

A method for preparing a metal-free few-layer phosphorous nanomaterial. The method comprises an ice-assisted exfoliation process (or solvent ice-assisted exfoliation process). The method allows for the preparation of a few-layer phosphorous nanomaterial with improved yield and reduced duration and exfoliation power. The few-layer phosphorous nanomaterial is used in the preparation of a photocatalyst. The photocatalyst exhibits a long-term stability, high photocatalytic H.sub.2 evolution efficiency from water, and good stability under visible light irradiation.

Methods for the preparation of few-layer phosphorene, compositions thereof and related devices fabricated therefrom.

Methods for the preparation of few-layer phosphorene, compositions thereof and related devices fabricated therefrom.