Nanostructured carbide chemical compound is used to convert carbide to carbon. A method comprising: providing at least one carbide chemical compound and reducing a metal cation with use of the carbide chemical compound to form elemental carbon, wherein the carbide chemical compound is nanostructured. The nanostructured carbide chemical compound can be in the form of a nanoparticle, a nanowire, a nanotube, a nanofilm, a nanoline. The reactant can be a metal salt. Electrochemical reaction, or reaction in the melt or in solution, can be used to form the carbon. The nanostructured carbide chemical compound can be an electrode.

A superabrasive compact and a method of making the superabrasive compact are disclosed. A superabrasive compact may include a diamond table and a substrate. The diamond table may be attached to the substrate. The substrate may have a metric of being defined as a ratio of carbon content over tungsten carbide content, wherein the metric ranges from about 6.13% to about 7.5%.

A polycrystalline diamond element leaching assembly includes a polycrystalline diamond element, a protective leaching cup surrounding at least a portion of the polycrystalline diamond element, and a protective layer positioned between the polycrystalline diamond element and the protective leaching cup. A method of processing a polycrystalline diamond element includes covering a selected portion of a polycrystalline diamond element with a curable resin layer, curing the curable resin layer to form a protective layer, and exposing at least a portion of the polycrystalline diamond element to a leaching agent. Another method of processing a polycrystalline diamond element includes depositing a curable resin within a protective leaching cup and positioning a polycrystalline diamond element within the protective leaching cup such that the curable resin is displaced so as to surround at least a portion of the polycrystalline diamond element.

Nanodiamonds are grown under conditions where diamond-like organic seed molecules do not decompose. This permits engineered growth of fluorescent nanodiamonds wherein a custom designed seed molecule can be incorporated at the center of a nanodiamond. By substituting atoms at particular locations in the seed molecule it is possible to achieve complex multi-atom diamond color centers or even to engineer complete quantum registers. In addition, it is possible to grow ultra-small nanodiamonds, wherein each nanodiamond, no matter how small, can have at least one bright and photostable fluorescent emitter.

Fuel capsules usable in inertial confinement fusion (ICF) reactors have shells made from materials having a diamond (sp.sup.3) lattice structure, including diamond materials in synthetic crystalline, polycrystalline (ordered or disordered), nanocrystalline and amorphous forms. The interior of the shell is filled with a fusion fuel mixture, including any combination of deuterium and/or tritium and/or helium-3 and/or other fusible isotopes.

A method of manufacturing a diamond by a vapor phase synthesis method includes: preparing a substrate including a diamond seed crystal; forming a light absorbing layer lower in optical transparency than the substrate by performing ion implantation into the substrate, the light absorbing layer being formed at a predetermined depth from a main surface of the substrate; growing a diamond layer on the main surface of the substrate by the vapor phase synthesis method; and separating the diamond layer from the substrate by applying light from a main surface of at least one of the diamond layer and the substrate to allow the light absorbing layer to absorb the light and cause the light absorbing layer to be broken up.

Provided is polycrystalline diamond having a diamond single phase as basic composition, in which the polycrystalline diamond includes a plurality of crystal grains and contains boron, at least either of nitrogen and silicon, and a remainder including carbon and trace impurities; the boron is dispersed in the crystal grains at an atomic level, and greater than or equal to 90 atomic % of the boron is present in an isolated substitutional type; the nitrogen and the silicon are present in an isolated substitutional type or an interstitial type in the crystal grains; each of the crystal grains has a grain size of less than or equal to 500 nm; and the polycrystalline diamond has a surface covered with a protective film.

A product of a chemical reaction, being a five carbon atom molecule having a tetrahedral structure consisting of four apical carbon atoms and a fifth carbon atom located centrally within the tetrahedral structure.

A method of manufacturing a diamond substrate includes: forming an ion implantation layer at a side of a main surface of a diamond seed substrate by implanting ions into the main surface of the diamond seed substrate; producing a diamond structure by growing a diamond growth layer by a vapor phase synthesis method on the main surface of the diamond seed substrate, after implanting the ions; and performing heat treatment on the diamond structure. The performed heat treatment causes the diamond structure to be separated along the ion implantation layer into a first structure including the diamond seed substrate and failing to include the diamond growth layer, and a diamond substrate including the diamond growth layer. Thus, the method of manufacturing a diamond substrate is provided that enables a diamond substrate with a large area to be manufactured in a short time and at a low cost.

A method of manufacturing a diamond substrate includes: forming an ion implantation layer at a side of a main surface of a diamond seed substrate by implanting ions into the main surface of the diamond seed substrate; producing a diamond structure by growing a diamond growth layer by a vapor phase synthesis method on the main surface of the diamond seed substrate, after implanting the ions; and performing heat treatment on the diamond structure. The performed heat treatment causes the diamond structure to be separated along the ion implantation layer into a first structure including the diamond seed substrate and failing to include the diamond growth layer, and a diamond substrate including the diamond growth layer. Thus, the method of manufacturing a diamond substrate is provided that enables a diamond substrate with a large area to be manufactured in a short time and at a low cost.