A negative electrode material for a secondary battery including: a matrix including silicon (Si), one or more doping elements (D) selected from the group consisting of alkali metals, alkaline earth metals, and post transition metals, and oxygen (O), based on an element component; and silicon nanoparticles dispersed and embedded in the matrix, wherein the negative electrode material has composition uniformity, and a ratio (A1/A2) between an area of a first peak (A1) and an area of a second peak (A2) satisfying 0.8 to 6, a diffraction angle 2θ being positioned in a range of 10° to 27.4° in the first peak and being positioned in a range of 28±0.5° in the second peak, in an X-ray diffraction pattern using a CuKα ray.

A silicon material can include a silicon aggregate comprising a plurality of porous silicon nanoparticles welded together. The silicon aggregate can optionally have a polyhedral morphology. A method can include: receiving a plurality of porous silicon nanoparticles and cold welding the plurality of porous silicon nanoparticles into an aggregated silicon particle.

A silicon material can include a silicon aggregate comprising a plurality of porous silicon nanoparticles welded together. The silicon aggregate can optionally have a polyhedral morphology. A method can include: receiving a plurality of porous silicon nanoparticles and cold welding the plurality of porous silicon nanoparticles into an aggregated silicon particle.

A quantum processing system is disclosed. In one embodiment, a quantum processing system comprises: a plurality of donor atoms positioned in a silicon crystal substrate, each donor atom positioned at a donor site; and a plurality of conductive control electrodes arranged about the donor atoms to operate the donor atoms as qubits. Where, at least two pairs of nearest neighbour donor atoms of the plurality of donor atoms are arranged along the [110] direction of the silicon crystal substrate and are configured to operate as qubits.

A quantum processing system is disclosed. In one embodiment, a quantum processing system comprises: a plurality of donor atoms positioned in a silicon crystal substrate, each donor atom positioned at a donor site; and a plurality of conductive control electrodes arranged about the donor atoms to operate the donor atoms as qubits. Where, at least two pairs of nearest neighbour donor atoms of the plurality of donor atoms are arranged along the [110] direction of the silicon crystal substrate and are configured to operate as qubits.

A negative electrode material for a lithium ion battery, the material comprising: particles comprising a core, with the core containing silicon, the particles having one or more coating layers disposed around the core, at least one of the coating layers comprising a porous semi-conducting metal oxide.

A negative electrode material for a lithium ion battery, the material comprising: particles comprising a core, with the core containing silicon, the particles having one or more coating layers disposed around the core, at least one of the coating layers comprising a porous semi-conducting metal oxide.

The invention relates to methods for producing non-aggregated, modified silicon particles by treating non-aggregated silicon particles which have volume-weighted particle size distributions with diameter percentiles d.sub.50 of 1.0 μm to 10.0 μm at 80° C. to 900° C. with an oxygen-containing gas.

The invention relates to methods for producing non-aggregated, modified silicon particles by treating non-aggregated silicon particles which have volume-weighted particle size distributions with diameter percentiles d.sub.50 of 1.0 μm to 10.0 μm at 80° C. to 900° C. with an oxygen-containing gas.

A method for manufacturing a tungsten trioxide/silicon nanocomposite structure includes steps as follows. A silicon substrate is provided, wherein a surface of the silicon substrate is formed with a plurality of microstructures. A tungsten trioxide precursor solution is provided, wherein the tungsten trioxide precursor solution is contacted with the silicon substrate. A hydrothermal synthesis step is conducted, wherein the tungsten trioxide precursor solution is reacted to form a plurality of tungsten trioxide particles on the plurality of microstructures, so as to obtain the tungsten trioxide/silicon nanocomposite structure.