A method for manufacturing a tungsten trioxide/silicon nanocomposite structure includes steps as follows. A silicon substrate is provided, wherein a surface of the silicon substrate is formed with a plurality of microstructures. A tungsten trioxide precursor solution is provided, wherein the tungsten trioxide precursor solution is contacted with the silicon substrate. A hydrothermal synthesis step is conducted, wherein the tungsten trioxide precursor solution is reacted to form a plurality of tungsten trioxide particles on the plurality of microstructures, so as to obtain the tungsten trioxide/silicon nanocomposite structure.

Provided are a method of manufacturing an amorphous silicon composite and an apparatus for manufacturing an amorphous silicon composite. The method of manufacturing an amorphous silicon composite, according to an embodiment, may include forming molten silicon by melting a silicon raw material, obtaining an amorphous silicon powder by cooling the molten silicon with a cooling device such that the molten silicon is solidified before being crystallized, obtaining amorphous nano-silicon by performing wet grinding on the amorphous silicon powder, obtaining a first mixture by mixing a first pitch with the amorphous nano-silicon, obtaining a second mixture by coating a second pitch on the first mixture, and obtaining the amorphous silicon composite by performing heat treatment on the second mixture.

A device is provided which is capable of evenly etching the entire surface of a silicon core wire. An etching device (1) for a silicon core wire (C1, C2, C3) includes: an etching bath (11, 12) for holding an etching solution (L1, L2); and a plurality of core wire support members (31) for supporting the silicon core wire (C1, C2, C3), the plurality of core wire support members (31) each having a hole (31A) through which the silicon core wire (C1, C2, C3) is to pass; and a position change mechanism (40) for changing a relative position where the silicon core wire (C1, C2, C3) passes through in relation to the hole (31A).

A device is provided which is capable of evenly etching the entire surface of a silicon core wire. An etching device (1) for a silicon core wire (C1, C2, C3) includes: an etching bath (11, 12) for holding an etching solution (L1, L2); and a plurality of core wire support members (31) for supporting the silicon core wire (C1, C2, C3), the plurality of core wire support members (31) each having a hole (31A) through which the silicon core wire (C1, C2, C3) is to pass; and a position change mechanism (40) for changing a relative position where the silicon core wire (C1, C2, C3) passes through in relation to the hole (31A).

Disclosed is a negative electrode active material which includes: a silicon oxide composite including i) Si, ii) a silicon oxide represented by SiO.sub.x (0 < x ≤ 2), and iii) magnesium silicate containing Si and Mg; and a carbon coating layer positioned on the surface of the silicon oxide composite and including a carbonaceous material, wherein X-ray diffractometry of the negative electrode active material shows peaks of Mg.sub.2SiO.sub.4 and MgSiO.sub.3 at the same time and shows no peak of MgO; the ratio of peak intensity, I (Mg.sub.2SiO.sub.4)/I (MgSiO.sub.3), which is intensity I (Mg.sub.2SiO.sub.4) of peaks that belong to Mg.sub.2SiO.sub.4 to intensity I (MgSiO.sub.3) of peaks that belong to MgSiO.sub.3 is smaller than 1, the peaks that belong to Mg.sub.2SiO.sub.4 are observed at 2θ = 32.2 ± 0.2°, and the peaks that belong to MgSiO.sub.3 are observed at 2θ = 30.9 ± 0.2°.

According to an example aspect of the present invention, there is provided a radiation window manufacturing method, comprising patterning a mask on a top surface of a bulk wafer or compound wafer, etching the bulk or compound wafer from the top surface, based on the mask, either by timed etching of the bulk wafer, or until an inner insulator layer of the compound wafer, thereby generating recesses in the bulk or compound wafer, filling the recesses, at least partly, with a filling material, polishing the top surface of the bulk or compound wafer, and providing a membrane layer on the polished top surface, and etching the bulk or compound wafer from a bottom surface, opposite the top surface, to build a supporting structure for the membrane layer in accordance with a shape defined by the mask.

According to an example aspect of the present invention, there is provided a radiation window manufacturing method, comprising patterning a mask on a top surface of a bulk wafer or compound wafer, etching the bulk or compound wafer from the top surface, based on the mask, either by timed etching of the bulk wafer, or until an inner insulator layer of the compound wafer, thereby generating recesses in the bulk or compound wafer, filling the recesses, at least partly, with a filling material, polishing the top surface of the bulk or compound wafer, and providing a membrane layer on the polished top surface, and etching the bulk or compound wafer from a bottom surface, opposite the top surface, to build a supporting structure for the membrane layer in accordance with a shape defined by the mask.

A layered solid formulation as one hydrogen supply material according to the present invention includes silicon fine particles having a capability of generating hydrogen and aggregates of the silicon fine particles, and a physiologically acceptable medium that gets contact with the silicon fine particles or the aggregates thereof. The hydrogen supply material is a hydrogen supply material for bringing the hydrogen into contact with the skin and/or the mucous membrane through the medium.

A layered solid formulation as one hydrogen supply material according to the present invention includes silicon fine particles having a capability of generating hydrogen and aggregates of the silicon fine particles, and a physiologically acceptable medium that gets contact with the silicon fine particles or the aggregates thereof. The hydrogen supply material is a hydrogen supply material for bringing the hydrogen into contact with the skin and/or the mucous membrane through the medium.

The present invention relates to a method of forming a composite particle, a composite particle precursor formulation, a composite particle, and a composite material comprising a plurality of composite particles. The method of forming a composite particle may include the step of: contacting an active material particle, a modified oligomeric metal coordination complex, and at least one polymer, to thereby form a composite particle.