An object of the present invention is to provide a method for producing oligosilane and in particular to provide a method that can efficiently produce oligosilane at lower temperatures and with an improved yield and selectivity. In the dehydrogenative coupling reaction of hydrosilane, oligosilane can be efficiently produced at an improved selectivity for oligosilane, and in particular at an improved selectivity for disilane, by carrying out the reaction in the presence of zeolite having pores with a minor diameter of at least 0.43 nm and a major diameter of not more than 0.69 nm.

1. The present invention relates to a method for the purification of halogenated oligosilanes as a pure compound or mixture of compounds each having at least one direct Si—Si bond, the substituents thereof being exclusively halogen or halogen and hydrogen, and the composition thereof being an atom ratio of substituent:silicon of at least 3:2, by the action of at least one purification agent on the halogenated oligosilane and isolation of the halogenated oligosilane with improved purity.

2.1. In the prior art, halogenated monosilanes such as HSiCl.sub.3 are purified by treatment with preferably polymeric organic compounds containing amino groups, and are separated out from these mixtures. This method cannot be used for halogenated oligosilanes because of the contained amino groups, since secondary reactions would lead to decomposition of the products. The new method should provide the desired products in high yield and purity without amino groups being used.

2.2. The purification of the halogenated oligosilanes is carried out in the presence of special purification agents, which convert contaminations such as, for example, FeCl.sub.2 into an insoluble and/or less volatile form. A separation of the products of completes the purification This method gives a high yield and avoids the problems associated with the prior art, such as, for example, long distillation times.

2.3. The method is suitable for the purification of, for example, Si.sub.2Cl.sub.6, Si.sub.3Cl.sub.8, Si.sub.4Cl.sub.10, and higher homologs. These find application, for example, in the deposition of silicon nitride layers in CVD processes.

1. The present invention relates to a method for the purification of halogenated oligosilanes as a pure compound or mixture of compounds each having at least one direct Si—Si bond, the substituents thereof being exclusively halogen or halogen and hydrogen, and the composition thereof being an atom ratio of substituent:silicon of at least 3:2, by the action of at least one purification agent on the halogenated oligosilane and isolation of the halogenated oligosilane with improved purity.

2.1. In the prior art, halogenated monosilanes such as HSiCl.sub.3 are purified by treatment with preferably polymeric organic compounds containing amino groups, and are separated out from these mixtures. This method cannot be used for halogenated oligosilanes because of the contained amino groups, since secondary reactions would lead to decomposition of the products. The new method should provide the desired products in high yield and purity without amino groups being used.

2.2. The purification of the halogenated oligosilanes is carried out in the presence of special purification agents, which convert contaminations such as, for example, FeCl.sub.2 into an insoluble and/or less volatile form. A separation of the products of completes the purification This method gives a high yield and avoids the problems associated with the prior art, such as, for example, long distillation times.

2.3. The method is suitable for the purification of, for example, Si.sub.2Cl.sub.6, Si.sub.3Cl.sub.8, Si.sub.4Cl.sub.10, and higher homologs. These find application, for example, in the deposition of silicon nitride layers in CVD processes.

The invention relates to a process for preparing higher halosilanes by disproportionation of lower halosilanes. The invention further relates to a process for preparing higher hydridosilanes from the higher halosilanes prepared by disproportionation. The invention further relates to mixtures containing at least one higher halosilane or at least one higher hydridosilane prepared by the process described. Finally, the invention relates to the use of such a mixture containing at least one higher hydridosilane for producing electronic or optoelectronic component layers or for producing silicon-containing layers.

The invention relates to a process for preparing higher halosilanes by disproportionation of lower halosilanes. The invention further relates to a process for preparing higher hydridosilanes from the higher halosilanes prepared by disproportionation. The invention further relates to mixtures containing at least one higher halosilane or at least one higher hydridosilane prepared by the process described. Finally, the invention relates to the use of such a mixture containing at least one higher hydridosilane for producing electronic or optoelectronic component layers or for producing silicon-containing layers.

By incorporating an additional TCS and/or DCS redistribution reactor in the TCS recycle loop and/or DCS recycle loop, respectively, of a process and system for silane manufacture, efficiencies in the production of silane are realized.

Provided are a silicene quantum dots-containing siloxene thin film and a preparation method therefor, which belong to the field of fluorescent functional nanomaterials. A siloxene thin film embedded with silicene quantum dots is prepared by uniformly mixing CaSi.sub.2 with a decalcification organic solvent and a transition metal chloride catalyst in a proportion, performing acid washing, and then performing ultrasonic dispersion. The thickness of such siloxene thin film is less than 1 to 2.5 nm, the size of the silicene quantum dots is 2 to 5 nm. In addition, the siloxene thin film has strong fluorescence emission performance in a blue light region, has a pseudodirect band gap, and shows a good application prospect in the fields of photoelectricity and the like.

A method includes producing a substituted cyclosilane by combining in a solvent the following: (i) halogenated cyclosilane, (ii) at least one of tri-alkyl or tri-aryl silane, and (iii) a complexing agent that includes at least one of ammonium halide or phosphonium halide. The halogenated cyclosilane reacts to produce the substituted cyclosilane.

A method includes producing a substituted cyclosilane by combining in a solvent the following: (i) halogenated cyclosilane, (ii) at least one of tri-alkyl or tri-aryl silane, and (iii) a complexing agent that includes at least one of ammonium halide or phosphonium halide. The halogenated cyclosilane reacts to produce the substituted cyclosilane.

A method for fabricating trihalodisilane, the method includes providing a halodisilane including at least four halogen atoms; reducing the halodisilane, using a mixed reducing agent including a first reducing agent represented by following Chemical Formula 1-1, in which R.sub.A is an alkyl group, and m and n are each independently 1 or 2, and m+n=3, and a second reducing agent represented by following Chemical Formula 2-1, in which R.sub.S is an alkyl group or an aryl group, p and q are each independently 1, 2, or 3, and p+q=4; and obtaining a product including a 1,1,1-trihalodisilane,

(R.sub.A).sub.m—Al—H.sub.n  [Chemical Formula 1-1]

(R.sub.S).sub.p—Sn—H.sub.q.  [Chemical Formula 2-1]